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Publikováno v:
IEEE Electron Device Letters. 42:78-81
In this work, we demonstrate CMOS integration that is fully compatible with a commercial double-implanted MOS (DMOS) process in 4H-SiC without requiring additional masks and cost. The characteristics of the NMOS, the PMOS, the CMOS inverter, and the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::608072e706539cac8fdae8d81dcb6494
https://doi.org/10.1109/led.2020.3038179
https://doi.org/10.1109/led.2020.3038179
