Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Kang-Cheng Qi"'
Publikováno v:
Physica B: Condensed Matter. 431:120-126
The optical constants of hydrogenated amorphous silicon (a-Si:H) deposited by plasma enhanced chemical vapor deposition (PECVD) have been obtained using the Forouhi–Bloomer (FB) model and the Tauc–Lorentz (TL) model, respectively. It is indicated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8306f406d25a6a7201d9b7f7da118e8
https://doi.org/10.1016/j.physb.2013.09.012
https://doi.org/10.1016/j.physb.2013.09.012
Publikováno v:
Advanced Materials Research. 815:673-676
In order to improve the secondary electron emission coefficient of MgO, we propose to dope Al into MgO. The precursor was obtained by hydrothermal method in the condition of different reaction temperature, different filling volume and different react
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23bab23fa0e303487948d512676c4bd2
https://doi.org/10.4028/www.scientific.net/amr.815.673
https://doi.org/10.4028/www.scientific.net/amr.815.673
Publikováno v:
Advanced Materials Research. 815:621-625
In this paper, a screen-printed LaB6discontinuous film is coated on the MgO protective layer to meet the market for low power requirement of AC PDP. The surface appearance, optical transmittance and conductivity properties of the screen-printed LaB6/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af9c0daf06fb52efee2a6f35823069e5
https://doi.org/10.4028/www.scientific.net/amr.815.621
https://doi.org/10.4028/www.scientific.net/amr.815.621
Publikováno v:
Surface and Coatings Technology. 214:131-137
The effect of gas temperature (T g ) in the process of plasma-enhanced chemical vapor deposition (PECVD) on the structural and optoelectronic properties of the grown a-Si:H thin film has been examined using multiple characterization techniques. Gas t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2642e12ef9f9665821ce7122712cf27
https://doi.org/10.1016/j.surfcoat.2012.11.014
https://doi.org/10.1016/j.surfcoat.2012.11.014
Publikováno v:
Science China Technological Sciences. 56:103-108
The relationship between structure and electronic properties of phosphorus-doped hydrogenated amorphous silicon (a-Si: H) thin films was investigated. Samples with different features were prepared by plasma enhanced chemical vapor deposition (PECVD)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::804eebfd665fc37c90b8efc22dd1cd5c
https://doi.org/10.1007/s11431-012-5013-4
https://doi.org/10.1007/s11431-012-5013-4
Publikováno v:
Journal of Materials Science. 47:5121-5127
The hydrogenated amorphous silicon (a-Si:H) thin films were prepared by plasma enhanced chemical vapor deposition at various substrate temperatures. This paper examined the relationship between structural evolution and electronic states of the tested
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a32490f1aa7740f3079d58afbf586fc5
https://doi.org/10.1007/s10853-012-6387-1
https://doi.org/10.1007/s10853-012-6387-1
Publikováno v:
Science in China Series E: Technological Sciences. 52:2406-2411
According to the different penetration depths for the incident lights of 472 nm and 532 nm in hydrogenated amorphous silicon (a-Si:H) thin films, the depth profile study on Raman spectra of a-Si:H films was carried out. The network ordering evolution
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a367ae1c13dd42e6b3114954f34080c
https://doi.org/10.1007/s11431-008-0343-y
https://doi.org/10.1007/s11431-008-0343-y
Publikováno v:
Science in China Series E: Technological Sciences. 52:339-343
Hydrogenated amorphous silicon (a-Si:H) thin films were deposited by plasma-enhanced vapor deposition (PECVD) at different silane temperatures (T g) before glow-discharge. The effect of T g on the amorphous network and optoelectronic properties of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d56c24a7108a48238d119c5266f2a36a
https://doi.org/10.1007/s11431-008-0196-4
https://doi.org/10.1007/s11431-008-0196-4
Publikováno v:
Philosophical Magazine. 88:3051-3057
Effects of silane temperature (T g) before glow-discharge on the optical and transport properties of hydrogenated amorphous silicon (a-Si:H) thin films were investigated. The optical measurements show that the refractive index increases with increasi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c0c196189f70aa193bf5968b0310b94
https://doi.org/10.1080/14786430802498998
https://doi.org/10.1080/14786430802498998
Publikováno v:
Applied Physics A. 91:349-352
The ordering evolution of the amorphous network of a-Si:H thin films with increasing initial silane-gas temperatures was investigated by Raman spectroscopy. The results show that there exists a gradual ordering of the amorphous network, both in the n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f0178cba0c031afb6e3b31e08d46b42
https://doi.org/10.1007/s00339-008-4413-6
https://doi.org/10.1007/s00339-008-4413-6