Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Kang-Cheng Qi"'
Publikováno v:
Physica B: Condensed Matter. 431:120-126
The optical constants of hydrogenated amorphous silicon (a-Si:H) deposited by plasma enhanced chemical vapor deposition (PECVD) have been obtained using the Forouhi–Bloomer (FB) model and the Tauc–Lorentz (TL) model, respectively. It is indicated
Publikováno v:
Advanced Materials Research. 815:673-676
In order to improve the secondary electron emission coefficient of MgO, we propose to dope Al into MgO. The precursor was obtained by hydrothermal method in the condition of different reaction temperature, different filling volume and different react
Publikováno v:
Advanced Materials Research. 815:621-625
In this paper, a screen-printed LaB6discontinuous film is coated on the MgO protective layer to meet the market for low power requirement of AC PDP. The surface appearance, optical transmittance and conductivity properties of the screen-printed LaB6/
Publikováno v:
Surface and Coatings Technology. 214:131-137
The effect of gas temperature (T g ) in the process of plasma-enhanced chemical vapor deposition (PECVD) on the structural and optoelectronic properties of the grown a-Si:H thin film has been examined using multiple characterization techniques. Gas t
Publikováno v:
Science China Technological Sciences. 56:103-108
The relationship between structure and electronic properties of phosphorus-doped hydrogenated amorphous silicon (a-Si: H) thin films was investigated. Samples with different features were prepared by plasma enhanced chemical vapor deposition (PECVD)
Publikováno v:
Journal of Materials Science. 47:5121-5127
The hydrogenated amorphous silicon (a-Si:H) thin films were prepared by plasma enhanced chemical vapor deposition at various substrate temperatures. This paper examined the relationship between structural evolution and electronic states of the tested
Publikováno v:
Science in China Series E: Technological Sciences. 52:2406-2411
According to the different penetration depths for the incident lights of 472 nm and 532 nm in hydrogenated amorphous silicon (a-Si:H) thin films, the depth profile study on Raman spectra of a-Si:H films was carried out. The network ordering evolution
Publikováno v:
Science in China Series E: Technological Sciences. 52:339-343
Hydrogenated amorphous silicon (a-Si:H) thin films were deposited by plasma-enhanced vapor deposition (PECVD) at different silane temperatures (T g) before glow-discharge. The effect of T g on the amorphous network and optoelectronic properties of th
Publikováno v:
Philosophical Magazine. 88:3051-3057
Effects of silane temperature (T g) before glow-discharge on the optical and transport properties of hydrogenated amorphous silicon (a-Si:H) thin films were investigated. The optical measurements show that the refractive index increases with increasi
Publikováno v:
Applied Physics A. 91:349-352
The ordering evolution of the amorphous network of a-Si:H thin films with increasing initial silane-gas temperatures was investigated by Raman spectroscopy. The results show that there exists a gradual ordering of the amorphous network, both in the n