Quantitative analysis of effect of dopant interaction on microstructural, physical, and electrical properties in laser-annealed SiGe:B:Ga film

Autor: Lee, Kiseok, Baik, Seunghyun, Kang, Joosung, Shin, Hyerin, Yoon, Dongmin, Kim, Soyoung, Moon, Jinwoo, Suh, Dong-Chan, Ko, Dae-Hong

Publikováno v: In Thin Solid Films 30 April 2022 748

Selective Etching of Si versus Si 1−x Ge x in Tetramethyl Ammonium Hydroxide Solutions with Surfactant.

Autor: Choi, Yongjoon, Cho, Choonghee, Yoon, Dongmin, Kang, Joosung, Kim, Jihye, Kim, So Young, Suh, Dong Chan, Ko, Dae-Hong

Publikováno v: Materials (1996-1944); Oct2022, Vol. 15 Issue 19, p6918, 14p

Selective Etching of Si versus Si 1-x Ge x in Tetramethyl Ammonium Hydroxide Solutions with Surfactant.

Autor: Choi Y; Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Korea., Cho C; Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Korea., Yoon D; Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Korea., Kang J; Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Korea., Kim J; Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Korea., Kim SY; Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Korea., Suh DC; BIO-IT Micro Fab Center, Yonsei University, Seoul 03722, Korea., Ko DH; Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Korea.

Publikováno v: Materials (Basel, Switzerland) [Materials (Basel)] 2022 Oct 05; Vol. 15 (19). Date of Electronic Publication: 2022 Oct 05.