Zobrazeno 1 - 10
of 35
pro vyhledávání: '"Kanetake Takasaki"'
Publikováno v:
Journal of The Electrochemical Society. 144:3984-3988
While investigating the surface dependence of the dry cleaning technique using Cl radicals generated with UV irradiation (UV/Cl 2 , we found that silicon chlorides [SiCl x (x = 1 to 4)], etching products created from a reaction between Si and Cl radi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3647a63c9ccef2b562eedb7d180a1f43
https://doi.org/10.1149/1.1838123
https://doi.org/10.1149/1.1838123
Publikováno v:
Applied Surface Science. :221-224
We have studied the structural evolution of the high density interfacial layer around 10 A thick in 40 A thermal oxide observed by difference X-ray reflectivity (DXR) techniques during thermal annealing. Effects of interfacial stress are evaluated by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::627b271af7783cd9bd0494576ead958f
https://doi.org/10.1016/s0169-4332(97)80083-9
https://doi.org/10.1016/s0169-4332(97)80083-9
Publikováno v:
Denki Kagaku oyobi Kogyo Butsuri Kagaku. 63:485-488
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5dcbfe428e12cdb18bc3c90827d85f15
https://doi.org/10.5796/kogyobutsurikagaku.63.485
https://doi.org/10.5796/kogyobutsurikagaku.63.485
Autor:
Kanetake Takasaki, Naoki Awaji, Toshiro Nakanishi, Satoshi Ohkubo, Yoshihiro Sugita, Satoshi Komiya, Takayuki Aoyama
Publikováno v:
Applied Physics Letters. 71:1954-1956
The x-ray interference technique has been applied to evaluate the structural changes of high temperature grown chemical vapor deposited (CVD) SiO2 film under several post annealing conditions. In annealing above 800 °C in O2 ambient, a thermal oxide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a35cc3ddae8277020c4b15c167758e1f
https://doi.org/10.1063/1.119753
https://doi.org/10.1063/1.119753
Autor:
Yoko Toda, Tatsuya Yamazaki, Kunihiro Suzuki, Takayuki Aoyama, Hiroko Tashiro, Kanetake Takasaki, Takashi Ito
Publikováno v:
Journal of Applied Physics. 77(No. 1):417-419
We investigated the effects of fluorine on boron diffusion in thin silicon oxides used for metal‐oxide‐semiconductor structures, including silicon dioxide and oxynitride. We used secondary ion mass spectroscopy to measure the boron penetration de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a69f66267139cbcb3964dc33cfb56cff
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100634579
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100634579
Publikováno v:
Proceedings of 1994 VLSI Technology Symposium.
Using clean ozone in a new load-locked oxidation system, we made thin gate oxides with improved charge to breakdown characteristics (Q/sub bd/) and low surface state sensitise (D/sub it/). >
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6fc6a6b4f45dd1e87ea4798b31287d11
https://doi.org/10.1109/vlsit.1994.324385
https://doi.org/10.1109/vlsit.1994.324385
Autor:
Rinshi Sugino, Kanetake Takasaki, Satoshi Ohkubo, Yoshihiro Sugita, Naoki Awaji, Yasuyuki Tamura, Toshiro Nakanishi
Publikováno v:
1995 Symposium on VLSI Technology. Digest of Technical Papers.
A significant improvement in ultra-thin (4 nm) gate oxide quality has been carried out using UV/O/sub 3/ pre-treatment of native oxide before thermal oxidation. UV/O/sub 3/ pre-treatment makes native oxide dense and close-packed without leaving any r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4f7fbc730d3ef2f68cc6f9fa195fa8f
https://doi.org/10.1109/vlsit.1995.520882
https://doi.org/10.1109/vlsit.1995.520882
Publikováno v:
Proceedings of International Symposium on Semiconductor Manufacturing.
We have found an effective dry cleaning technique using SiCl/sub 4/ as a cleaning gas. Now, for the first time, surface Fe contaminants can be removed from an SiO/sub 2/ surface using SiCl/sub 4/. A Cl/sub 2/+SiCl/sub 4/ combination allows dry cleani
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f99cb2043198fc28f993169f883cb40b
https://doi.org/10.1109/issm.1995.524404
https://doi.org/10.1109/issm.1995.524404
Publikováno v:
Extended Abstracts of the 2000 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::050e59feb51d2a1f3028131222b9c91a
https://doi.org/10.7567/ssdm.2000.c-4-1
https://doi.org/10.7567/ssdm.2000.c-4-1
Autor:
Toshiro Nakanishi, Kiyoshi Irino, Mayumi Shigeno, Satoshi Okubo, Yasuyuki Tamura, Kanetake Takasaki
Publikováno v:
Extended Abstracts of the 1999 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03266fddf3a58dcc1f67c8fe0d2e51e4
https://doi.org/10.7567/ssdm.1999.b-3-3
https://doi.org/10.7567/ssdm.1999.b-3-3