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pro vyhledávání: '"Kane, Norton"'
Autor:
Mark A. Buckingham, Kane Norton, Paul D. McNaughter, George Whitehead, Inigo Vitorica-Yrezabal, Firoz Alam, Kristine Laws, David J. Lewis
Publikováno v:
Buckingham, M, Norton, K, Mcnaughter, P, Whitehead, G, Vitorica-Yrezabal, I, Alam, F, Laws, K & Lewis, D 2022, ' Investigating the effect of steric hindrance within CdS single-source precursors on the material properties of AACVD and spin coat-deposited CdS thin films ', Inorganic Chemistry, vol. 61, no. 21, pp. 8206–8216 . https://doi.org/10.1021/acs.inorgchem.2c00616
Cadmium sulfide (CdS) is an important semiconductor for electronic and photovoltaic applications, particularly when utilised as a thin film for window layers in CdTe solar cells. Deposition of thin film CdS through the decomposition of single source
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3c9dd30a3df684c8a05159cf577cd20c
https://doi.org/10.1021/acs.inorgchem.2c00616
https://doi.org/10.1021/acs.inorgchem.2c00616
Publikováno v:
Applied Sciences, Vol 11, Iss 2062, p 2062 (2021)
Norton, K, Alam, F & Lewis, D 2022, ' A Review of the Synthesis, Properties, and Applications of Bulk and Two-Dimensional Tin(II) Sulfide (SnS) ', Applied Sciences, vol. 11, no. 5, 2062 . https://doi.org/10.3390/app11052062
Norton, K, Alam, F & Lewis, D 2022, ' A Review of the Synthesis, Properties, and Applications of Bulk and Two-Dimensional Tin(II) Sulfide (SnS) ', Applied Sciences, vol. 11, no. 5, 2062 . https://doi.org/10.3390/app11052062
Tin(II) sulfide (SnS) is an attractive semiconductor for solar energy conversion in thin film devices due to its bandgap of around 1.3 eV in its orthorhombic polymorph, and a band gap energy of 1.5–1.7 eV for the cubic polymorph—both of which are
Autor:
Kane, Norton, Jens, Kunstmann, Lu, Ping, Alexander, Rakowski, Chuchen, Wang, Alexander J, Marsden, Ghulam, Murtaza, Niting, Zeng, Simon G, McAdams, Simon J, McAdams, Mark A, Bissett, Sarah J, Haigh, Brian, Derby, Gotthard, Seifert, Jack Chun-Ren, Ke, David J, Lewis
Publikováno v:
Chemical Science
Norton, K, Kunstmann, J, Ping, L, Rakowski, A, Wang, C, Marsden, A J, Murtaza, G, Zeng, N, McAdams, S J, Bissett, M A, Haigh, S J, Derby, B, Seifert, G & Lewis, D J 2019, ' Synthetic 2-D Lead Tin Sulfide Nanosheets with Tuneable Optoelectronic Properties from a Potentially Scalable Reaction Pathway ', Chemical Science, vol. 10, no. 4, pp. 1035-1045 . https://doi.org/10.1039/C8SC04018D
Norton, K, Kunstmann, J, Ping, L, Rakowski, A, Wang, C, Marsden, A J, Murtaza, G, Zeng, N, McAdams, S J, Bissett, M A, Haigh, S J, Derby, B, Seifert, G & Lewis, D J 2019, ' Synthetic 2-D Lead Tin Sulfide Nanosheets with Tuneable Optoelectronic Properties from a Potentially Scalable Reaction Pathway ', Chemical Science, vol. 10, no. 4, pp. 1035-1045 . https://doi.org/10.1039/C8SC04018D
Thermolysis of molecular precursors followed by liquid phase exfoliation accesses 2-D IV–VI semiconductor nanomaterials.
Solventless thermolysis of molecular precursors followed by liquid phase exfoliation allows access to two-dimensional IV
Solventless thermolysis of molecular precursors followed by liquid phase exfoliation allows access to two-dimensional IV