Experimental Investigation of the Seeding Stage during SiC Solution Growth Using Si and Al-Si Solvents

Autor: Pierre Brosselard, Kanaparin Ariyawong, Didier Chaussende, Jean Marc Dedulle, Yun Ji Shin, Beatrice Doisneau

Publikováno v: International conference on Silicon Carbide and Related Materials 2015
International conference on Silicon Carbide and Related Materials 2015, Oct 2015, Giardini Naxos, Italy. ⟨10.4028/www.scientific.net/MSF.858.81⟩

In this work, we have investigated the seeding stage of 4H-SiC top seeded solution growth through the systematic observation of surface morphologies and numerical simulation. Different growth temperatures, C- and Si-polarities, and different solvents

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6b885dbad810a71915517d0411c0adbf
https://doi.org/10.4028/www.scientific.net/msf.858.81

Macroscopic Approach to the Nucleation and Propagation of Foreign Polytype Inclusions during Seeded Sublimation Growth of Silicon Carbide

Autor: Didier Chaussende, Kanaparin Ariyawong, J.M. Dedulle, Eirini Sarigiannidou, Nikolaos Tsavdaris

Publikováno v: Crystal Growth & Design. 15:156-163

The nucleation and propagation of foreign polytypes during seeded sublimation growth of silicon carbide is addressed on a macroscopic footing, using a coupled experimental and numerical simulation approach. Experiments are conducted in a contactless

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::337ca2333c797b92ce91d01a8d3598d4
https://doi.org/10.1021/cg501095b

Interaction between Vapor Species and Graphite Crucible during the Growth of SiC by PVT

Autor: Didier Chaussende, Nikolaos Tsavdaris, Thierry Ouisse, Kanaparin Ariyawong, Jean Marc Dedulle, Eirini Sarigiannidou

Publikováno v: Materials Science Forum. :31-34

Graphite crucible in seeded sublimation growth of Silicon Carbide (SiC) single crystal does not only act as a container but also as an additional carbon source. The modeling of the growth process integrated with the etching phenomenon caused by the i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3be786970784641ccdec2c3aca76b9f9
https://doi.org/10.4028/www.scientific.net/msf.778-780.31

Electromagnetic Enhancement of Carbon Transport in SiC Solution Growth Process: A Numerical Modeling Approach

Autor: Jean Marc Dedulle, Didier Chaussende, Kanaparin Ariyawong

Publikováno v: Materials Science Forum. :71-74

The carbon distribution and its transport in the liquid from the source to the crystal directly affect the control of parasitic nucleation, the growth front stability, and the growth rate during SiC solution growth. Controlling the carbon transport i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d8fba90a27333420e38285c5915ed165
https://doi.org/10.4028/www.scientific.net/msf.778-780.71

Analysis of Macrostep Formation during Top Seeded Solution Growth of 4H-SiC

Autor: Kanaparin Ariyawong, J.M. Dedulle, Yun Ji Shin, Didier Chaussende

Publikováno v: Crystal Growth & Design
Crystal Growth & Design, American Chemical Society, 2016, 16 (6), pp.3231-3236. ⟨10.1021/acs.cgd.6b00155⟩

International audience; We used numerical and analytical modeling to investigate fluid flow behaviors close to the growing 4H-SiC crystal surface in the top seeded solution growth process. First, we calculated the azimuthal and radial components of t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ddce7a6562a0be708d697714f9ac2e76
https://hal.archives-ouvertes.fr/hal-01456078