Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Kaname Imokawa"'
Autor:
Kaname Imokawa, Takayuki Kurashige, Akira Suwa, Daisuke Nakamura, Taizoh Sadoh, Tetsuya Goto, Hiroshi Ikenoue
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 27-32 (2020)
We demonstrated that p- and n-type activation layers can be formed in Si films by laser doping with H3PO4 solution and Al2O3 sol coating. The phosphorus and aluminum concentrations at the laser doped region were found to be over 1019 cm-3 in Si films
Externí odkaz:
https://doaj.org/article/ac1be0221a0a4e7aa2627fb923ae43bf
Publikováno v:
Journal of Electronic Materials. 51:3766-3772
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc3553cebc0daa4fb0bdc58822c10873
https://doi.org/10.1007/s11664-022-09625-4
https://doi.org/10.1007/s11664-022-09625-4
Publikováno v:
2022 IEEE International Interconnect Technology Conference (IITC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4cd546ae18c1a7b473ef3602cb89ce3e
https://doi.org/10.1109/iitc52079.2022.9881290
https://doi.org/10.1109/iitc52079.2022.9881290
Autor:
Tetsuya Goto, Akira Suwa, Takayuki Kurashige, Kaname Imokawa, Hiroshi Ikenoue, Taizoh Sadoh, Daisuke Nakamura
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 27-32 (2020)
We demonstrated that p- and n-type activation layers can be formed in Si films by laser doping with H3PO4 solution and Al2O3 sol coating. The phosphorus and aluminum concentrations at the laser doped region were found to be over 1019 cm-3 in Si films
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9e7cdfa1289c3c96f7314346f4418688
https://ieeexplore.ieee.org/document/8918252/
https://ieeexplore.ieee.org/document/8918252/
Autor:
Kento Okamoto, Tanemasa Asano, Toshifumi Kikuchi, Daisuke Nakamura, Akihiro Ikeda, Hiroshi Ikenoue, Kaname Imokawa
Publikováno v:
Materials Science Forum. 963:403-406
We developed a novel KrF excimer laser doping system for 4H-SiC power devices, and demonstrated laser doping of 4H-SiC with Al thin film deposited on the surface. As seen from the results of the Al depth profile, high concentration implantation (~ 10
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d47e5b38c8fbc1c544fa8c8d9e7c92fd
https://doi.org/10.4028/www.scientific.net/msf.963.403
https://doi.org/10.4028/www.scientific.net/msf.963.403
Autor:
Abdelrahman Zkria, Shinya Ohmagari, Yūki Katamune, Tsuyoshi Yoshitake, Eslam Abubakr, Hiroshi Ikenoue, Kaname Imokawa
Publikováno v:
Diamond and Related Materials. 95:166-173
A singlecrystalline diamond (100)(Ib) plate immersed in 2% boric acid was irradiated by 193-nm ArF excimer laser beams for the formation of conductive layers on the surface of an insulating diamond substrate. From current-voltage measurements of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::001afe1aa3d5de3c57a29c2db06e856b
https://doi.org/10.1016/j.diamond.2019.04.013
https://doi.org/10.1016/j.diamond.2019.04.013
Publikováno v:
Japanese Journal of Applied Physics. 60:086502
To understand the laser doping conditions by the KrF excimer laser, a calculation was attempted using a commercially available TCAD (ATLAS by SILVACO). Compared with the experimental results, it was found that the difference occurred at the temperatu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01eea1fdf4229b206d4dce5b6fac2ddb
https://doi.org/10.35848/1347-4065/ac119f
https://doi.org/10.35848/1347-4065/ac119f
Autor:
Junichi Fujimoto, Junichi Maekawa, Hiroshi Umeda, Koji Ashikawa, Ryoichi Nohdomi, Takayuki Nagashima, Hakaru Mizoguchi, Yosuke Watanabe, Hisakazu Katsuumi, Akiyoshi Suzuki, Takashi Matsunaga, Satoshi Tanaka, Kaname Imokawa
Publikováno v:
SID Symposium Digest of Technical Papers. 48:1532-1535
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::539e42801a23f2a32a86177202017f00
https://doi.org/10.1002/sdtp.11941
https://doi.org/10.1002/sdtp.11941
Autor:
Fuminobu Hamano, Daisuke Nakamura, Akira Mizutani, Tetsuya Goto, Kaname Imokawa, Hiroshi Ikenoue
Publikováno v:
Laser-based Micro- and Nanoprocessing XIV.
Low-temperature poly-Si (LTPS) thin films formed by excimer laser annealing (ELA) are used as the channel material for thin film transistors (TFTs), which have an application as switching devices in flat panel displays. It is well known that one of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbbcd92f12e3a68487dd825dd9a17abf
https://doi.org/10.1117/12.2544910
https://doi.org/10.1117/12.2544910
Publikováno v:
Synthesis and Photonics of Nanoscale Materials XVI.
Ultra-large scale integrated circuits (ULSIs) have been continually scaled down according to Moore’s law. This can improve their power consumption and operation frequency but not the RC delay of their interconnections; to this end, super low dielec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6db5c48b903e20b71aa793875028bcba
https://doi.org/10.1117/12.2509176
https://doi.org/10.1117/12.2509176