Zobrazeno 1 - 10
of 70
pro vyhledávání: '"Kanako Shojiki"'
Publikováno v:
AIP Advances, Vol 11, Iss 9, Pp 095012-095012-10 (2021)
High-temperature annealing of sputtered AlN (Sp-AlN) using a face-to-face configuration is a novel technique that has attracted considerable attention because it can reduce the threading dislocation density of Sp-AlN to 107 cm−2. However, drawbacks
Externí odkaz:
https://doaj.org/article/c0a76976cf0943ddaf31357c14749567
Publikováno v:
AIP Advances, Vol 9, Iss 12, Pp 125342-125342-9 (2019)
The impact of a face-to-face annealed sputtered AlN/sapphire (FFA Sp-AlN) template with threading-dislocation densities (TDDs) of 2 × 108 cm−2 and an n-type AlGaN (n-AlGaN) underlayer on optical properties of AlGaN multiple quantum wells (MQWs) wi
Externí odkaz:
https://doaj.org/article/ea229a84afd549aa8716a2d1fb22b39c
Autor:
Hiroto Honda, Soshi Umeda, Kanako Shojiki, Hideto MIYAKE, Shuhei Ichikawa, Jun Tatebayashi, Yasufumi FUJIWARA, Kazunori Serita, Hironaru Murakami, Masayoshi Tonouchi, Masahiro Uemukai, Tomoyuki TANIKAWA, Ryuji KATAYAMA
Publikováno v:
Applied Physics Express.
Far-ultraviolet (UV) light sources have attracted much attention for human safe viral inactivation and bacterial disinfection. Due to large optical nonlinearity and transparency to this wavelength region, second harmonic generation (SHG) device made
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::280357ebf85ef0cd7f50ce72d1fa3775
https://doi.org/10.35848/1882-0786/acda79
https://doi.org/10.35848/1882-0786/acda79
Autor:
Naoya Mokutani, Momoko Deura, Shinichiro Mouri, Kanako Shojiki, Shiyu Xiao, Hideto Miyake, Tsutomu Araki
Publikováno v:
physica status solidi (b).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f7bd725dd497c2f17d4b5ce1e4b7586
https://doi.org/10.1002/pssb.202300061
https://doi.org/10.1002/pssb.202300061
Autor:
Yudai Nakanishi, Yusuke Hayashi, Takeaki Hamachi, Tetsuya Tohei, Yoshikata Nakajima, Shiyu Xiao, Kanako Shojiki, Hideto Miyake, Akira Sakai
Publikováno v:
Journal of Electronic Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::511d91bf5c11992c0c01fbe763b6b55d
https://doi.org/10.1007/s11664-023-10348-3
https://doi.org/10.1007/s11664-023-10348-3
Autor:
Takashi Hanada, Yuantao Zhang, Takeshi Kimura, V. Suresh Kumar, Ryuji Katayama, S. Y. Ji, Jung Hun Choi, Kanako Shojiki, Takashi Matsuoka
Publikováno v:
Journal of Nanoscience and Nanotechnology. 20:2979-2986
InGaN epitaxial layers were grown on c-plane sapphire substrates using the metalorganic vapour phase epitaxy (MOVPE) system at 760 °C. By varying the total flow rate of group-III sources (TMI+TEG) with a fixed molar ratio of group-III sources [TMI/(
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::afc792d6ff7ead3bbafc8287490fe82b
https://doi.org/10.1166/jnn.2020.17466
https://doi.org/10.1166/jnn.2020.17466
Autor:
Eri Matsubara, Ryota Hasegawa, Toma Nishibayashi, Ayumu Yabutani, Ryoya Yamada, Yoshinori Imoto, Ryosuke Kondo, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Kanako Shojiki, Shinya Kumagai, Hideto Miyake, Motoaki Iwaya
Publikováno v:
Applied Physics Express. 15:116502
Thin films of AlN, AlGaN, and AlGaN-based device structures of approximately 1 cm2 formed on a sapphire substrate were successfully exfoliated from the substrate by immersion in heated (115 °C) and pressurized (170 kPa) water. These thin films were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0e2f895dcfb86a37c14d7295ebc6c65
https://doi.org/10.35848/1882-0786/ac97dc
https://doi.org/10.35848/1882-0786/ac97dc
Publikováno v:
Coatings
Volume 11
Issue 8
Coatings, Vol 11, Iss 956, p 956 (2021)
Volume 11
Issue 8
Coatings, Vol 11, Iss 956, p 956 (2021)
Face-to-face annealed sputter-deposited aluminum nitride (AlN) templates (FFA Sp-AlN) are a promising material for application in deep-ultraviolet light-emitting diodes (DUV-LEDs), whose performance is directly related to the crystallinity of the AlN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dd9ab959cf169be6c1694e580c95a6be
Publikováno v:
Journal of Crystal Growth. 512:16-19
The strain relaxation of sputter-deposited AlN (sp-AlN) films on c-plane sapphire substrates before and after face-to-face annealing (FFA) was evaluated. After FFA, the AlN films consisted of a layer with compressive strain and an extremely low dislo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62c02ef4c34f7e423e820a00b525117a
https://doi.org/10.1016/j.jcrysgro.2019.02.001
https://doi.org/10.1016/j.jcrysgro.2019.02.001