Zobrazeno 1 - 10
of 53
pro vyhledávání: '"Kanad Mallik"'
Autor:
Kanad Mallik
A novel approach has been suggested to use isoelectric points of viral and human proteins to quickly identify proteins that are effective in not allowing virus particles to attach to human receptor cells by virtue of their electrical charge. The meth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b226c7a8e3db6deb9c4bdd19c4e91d35
https://doi.org/10.20944/preprints202005.0270.v1
https://doi.org/10.20944/preprints202005.0270.v1
Publikováno v:
Solid-State Electronics. 93:43-48
Passive devices and spiral inductors in particular suffer severely from losses in the silicon substrate underneath. This major component in limiting the quality factor of spiral inductors can be mitigated by using higher substrate resistivity or by l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9fcf4e649cbbf7089e407e16adaf4ea
https://doi.org/10.1016/j.sse.2013.12.009
https://doi.org/10.1016/j.sse.2013.12.009
Deep level manganese (Mn) doping has been used to fabricate very high resistivity single crystal silicon substrates grown by the Czochralski method. The Mn has been introduced by ion implantation with a dose of 1014 cm-2 of Mn at 100 keV followed by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fc13ae16cefe606251d0fa2dfa24b27d
https://doi.org/10.1063/1.2349836
https://doi.org/10.1063/1.2349836
We report our fabrication of pentacene field effect transistors (FETs) based on a vacuum processed and e-beam cured polymer electrolyte (i.e., tripropylene glycol diacrylate (TRPGDA)) as a gate dielectric layer on flexible wide web substrates. The de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::09d28d2ab66456989db4d080ee142b19
https://doi.org/10.1557/opl.2011.791
https://doi.org/10.1557/opl.2011.791
The introduction of silicon-germanium into silicon technology has dramatically increased the speed of both bipolar and MOS transistors. The point has now been reached where silicon-based IV/IV devices are capable of operating at frequencies approachi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b85010ed25a49e4b58b60d5f6625703a
https://doi.org/10.1149/1.2980291
https://doi.org/10.1149/1.2980291
We report a technique of fabrication of Al nanoislands of dimensions as small as 3 nm. Thin Al foils were anodized from both the surfaces under conditions suitable for the growth of porous alumina. Unanodized Al nanoislands were thus formed at the in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::19a06c89fa1c9570321b6067fd45fd44
https://doi.org/10.1116/1.1532025
https://doi.org/10.1116/1.1532025
Autor:
A. Abuelgasim, Steve Hall, Peter Ashburn, William Redman-White, C.H. de Groot, A. Bousquet, Kanad Mallik, M. M. A. Hakim, L. Tan, S. Connor
Publikováno v:
IEEE Transactions on Electron Devices. 57:3318-3326
We report for the first time a CMOS-compatible silicidation technology for surround-gate vertical MOSFETs. The technology uses a double spacer comprising a polysilicon spacer for the surround gate and a nitride spacer for silicidation and is successf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0023c3fce8d503b495ba0b7b01cf39d0
https://doi.org/10.1109/ted.2010.2082293
https://doi.org/10.1109/ted.2010.2082293
Autor:
Jason R. Hyde, Kanad Mallik, James W. Wilson, Chinh Q. Nguyen, Steven M. Howdle, Mohammad Afzaal, Pier J. A. Sazio, David C. Smith, Paul O'Brien, Mohamed Malik, Jixin Yang, Michael W. George
Publikováno v:
Advanced Materials. 21:4115-4119
Supercritical chemical fluid deposition (SCFD) has attracted considerable attention recently due to its ability to fill high aspect ratio templates. One technologically relevant example is the damascene process deposition of conformal low-resistivity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea1ddf53a799d3154280cf5b9c6ad0b5
https://doi.org/10.1002/adma.200803751
https://doi.org/10.1002/adma.200803751
Publikováno v:
Solid State Phenomena. :101-106
The concept of fully encapsulated, semi-insulating silicon (SI-Si), Czochralski-silicon-on-insulator (CZ-SOI) substrates for silicon microwave devices is presented. Experimental results show that, using gold as a compensating impurity, a Si resistivi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::141fba454ede08e423293ae6c137d249
https://doi.org/10.4028/www.scientific.net/ssp.156-158.101
https://doi.org/10.4028/www.scientific.net/ssp.156-158.101
Autor:
Kanad Mallik, Jixin Yang, Mohamed Malik, Jason R. Hyde, Andrew L. Hector, Pier J. A. Sazio, Michael W. George, James M. Wilson, Wenjian Zhang, Gillian Reid, David C. Smith, Paul O'Brien, Chinh Q. Nguyen, Gabriele Aksomaityte, William Levason, Mohammad Afzaal, Fei Cheng, Michael A. Webster, Steven M. Howdle
Publikováno v:
ECS Transactions. 25:1193-1197
The main advantage of deposition from supercritical fluids over conventional CVD is the ability to fill high aspect ratio templates. Deposition of metals, indirect semiconductors and insulators into templates with dimensions down to 3 nm has been dem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d787cad51fe1bfd15baa029937932bc
https://doi.org/10.1149/1.3207724
https://doi.org/10.1149/1.3207724