Zobrazeno 1 - 10
of 786
pro vyhledávání: '"Kan, Hao"'
Autor:
Zhou, Zijian, Huang, Jinhai, Xue, Kan-Hao, Yu, Heng, Yang, Shengxin, Liu, Shujuan, Wang, Yiqun, Miao, Xiangshui
As the dielectric film thickness shrinks to ~10 nm, some traditional wurtzite piezoelectric materials demonstrate ferroelectricity through element doping. Among them, Sc doped AlN and Mg doped ZnO are the most famous examples. While it is widely ackn
Externí odkaz:
http://arxiv.org/abs/2410.02471
Structure evolution path of ferroelectric hafnium zirconium oxide nanocrystals under in-situ biasing
Autor:
Zheng, Yunzhe, Yu, Heng, Xin, Tianjiao, Xue, Kan-Hao, Xu, Yilin, Gao, Zhaomeng, Liu, Cheng, Zhao, Qiwendong, Zheng, Yonghui, Miao, Xiangshui, Cheng, Yan
Fluorite-type $\mathrm{HfO_2}$-based ferroelectric (FE) oxides have rekindled interest in FE memories due to their compatibility with silicon processing and potential for high-density integration. The polarization characteristics of FE devices are go
Externí odkaz:
http://arxiv.org/abs/2409.11217
Publikováno v:
Applied Physics Letters 125, 102903 (2024)
While ferroelectric hafnia ($\mathrm{HfO_2}$) has become a technically important material for microelectronics, the physical origin of its ferroelectricity remains poorly understood. The tetragonal $P4_2/nmc$ phase is commonly assigned as its paraele
Externí odkaz:
http://arxiv.org/abs/2403.08234
Autor:
Yan, Zhao-Yi, Hou, Zhan, Xue, Kan-Hao, Lu, Tian, Zhao, Ruiting, Xue, Junying, Wu, Fan, Shao, Minghao, Yan, Jianlan, Yan, Anzhi, Wang, Zhenze, Shen, Penghui, Zhao, Mingyue, Miao, Xiangshui, Lin, Zhaoyang, Liu, Houfang, Tian, He, Yang, Yi, Ren, Tian-Ling
Two-dimensional material-based field effect transistors (2DM-FETs) are playing a revolutionary role in electronic devices. However, after years of development, no device model can match the Pao-Sah model for standard silicon-based transistors in term
Externí odkaz:
http://arxiv.org/abs/2303.11107
Autor:
Yan, Zhao-Yi, Hou, Zhan, Wu, Fan, Zhao, Ruiting, Yan, Jianlan, Yan, Anzhi, Wang, Zhenze, Xue, Kan-Hao, Liu, Houfang, Tian, He, Yang, Yi, Ren, Tian-Ling
Two-dimensional materials-based field-effect transistors (2DM-FETs) exhibit both ambipolar and unipolar transport types. To physically and compactly cover both cases, we put forward a quasi-Fermi-level phase space (QFLPS) approach to model the ambipo
Externí odkaz:
http://arxiv.org/abs/2303.06926
Autor:
Huang, Jinhai, Mao, Ge-Qi, Xue, Kan-Hao, Yang, Shengxin, Ye, Fan, Sun, Huajun, Miao, Xiangshui
Publikováno v:
Journal of Applied Physics 133, 184101 (2023)
$\mathrm{HfO_2}$-based dielectrics are promising for nanoscale ferroelectric applications, and the most favorable material within the family is Zr-substituted hafnia, i.e., $\mathrm{Hf_{1-x}Zr_xO_2}$ (HZO). The extent of Zr substitution can be great,
Externí odkaz:
http://arxiv.org/abs/2302.03852
Publikováno v:
Journal of Chemical Physics 158, 094103 (2023)
DFT-1/2 is an efficient band gap rectification method for density functional theory (DFT) under local density approximation (LDA) or generalized gradient approximation. It was suggested that non-self-consistent DFT-1/2 should be used for highly ionic
Externí odkaz:
http://arxiv.org/abs/2209.01636
Autor:
Bai, Na, Xue, Kan-Hao, Huang, Jinhai, Yuan, Jun-Hui, Wang, Wenlin, Mao, Ge-Qi, Zou, Lanqing, Yang, Shengxin, Lu, Hong, Sun, Huajun, Miao, Xiangshui
Publikováno v:
Advanced Electronic Materials 9, 2200737 (2023)
The wake-up phenomenon widely exists in hafnia-based ferroelectric capacitors, which causes device parameter variation over time. Crystallization at higher temperatures have been reported to be effective in eliminating wake-up, but high temperature m
Externí odkaz:
http://arxiv.org/abs/2206.14393
Autor:
Junru Yuan, Yi Li, Meng Wang, Xiaodi Huang, Tao Zhang, Kan‐Hao Xue, Junhui Yuan, Jun Ou‐Yang, Xiaofei Yang, Xiangshui Miao, Benpeng Zhu
Publikováno v:
InfoMat, Vol 6, Iss 6, Pp n/a-n/a (2024)
Abstract Due to its non‐invasive nature, ultrasound has been widely used for neuromodulation in biological systems, where its application influences the synaptic weights and the process of neurotransmitter delivery. However, such modulation has not
Externí odkaz:
https://doaj.org/article/3f0c386be6734d91824c0ff60a1c9249
Publikováno v:
Physical Review Materials 6, 084603 (2022)
The highly non-linear switching behavior of hafnia memristor actually hinders its wide application in neuromorphic computing. Theoretical understanding into its switching mechanism has been focused on the processes of conductive filament generation a
Externí odkaz:
http://arxiv.org/abs/2203.16131