Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Kamuran Kara"'
Autor:
Ayşe Merve TAT, Necati Muhammed TAT, Kamuran KARAMAN, Ahmet Fayik ÖNER, Tuğba GÖNEN, Sinan AKBAYRAM, Volkan DENİZ, Ali Bülent ANTMEN, Hatice Sena ÖNER
Publikováno v:
Archives of Health Science and Research, Vol 11, Iss 2, Pp 128-132 (2024)
Objective: The evaluation of health-related quality of life (HRQoL) is encouraged to assess the multidimensional impact of treatments and disease and to improve care in boys with hemophilia (BwH). However, validated HRQoL tools for BwH are not yet av
Externí odkaz:
https://doaj.org/article/bec08f51f636481e81eee84fefeb2071
Akademický článek
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Publikováno v:
Physica Scripta. 97:015803
In this paper, the effects of annealing temperature on the performance of a ZnO thin film-based Metal-Semiconductor-Metal (MSM) type ultraviolet (UV) photodetector is reported. ZnO thin films were grown on a glass substrate using the Pulsed Filtered
Autor:
Zihni Mutlu, Selim Ersanli, Volkan Arisan, Kamuran Kara, Merva Soluk Tekkeşin, Murat Karabagli, Ayse Erol, Ala Hassan A. Qamheya
Publikováno v:
Clinical Oral Implants Research. 29:741-755
OBJECTIVES This study aimed to analyze and compare the topographical, chemical, and osseointegration characteristics of a sandblasted acid-etched surface (SLA group), a sandblasted thermally oxidized surface (SO group), and a surface chemically modif
Autor:
Kamuran Kara, Ryan B. Lewis, Elif Akalin, M. Aslan, Ayse Erol, Thomas Tiedje, Vahid Bahrami-Yekta
Publikováno v:
Journal of Alloys and Compounds. 722:339-343
We study structural properties and surface formation of undoped, n- and p-type doped GaAsBi alloys with various bismuth compositions using Micro-Raman, Fourier Transform (FT) Raman, Photoluminescence (PL) and Atomic Force Microscopy (AFM) techniques.
Publikováno v:
Physica Scripta; Jan2022, Vol. 97 Issue 1, p1-11, 11p
Publikováno v:
Journal of nanoscience and nanotechnology. 19(12)
A GaAs1-xBix layer was grown by molecular beam epitaxy (MBE) with a low Bi content (2.3%) on GaAs maintaining the substrate at a non-rotating state and was then annealed at 750 °C, 800 °C and 850 °C. Each sample that was covered with droplets was
Autor:
Ebru Senadim Tuzemen, Ramazan Esen, Ismail Altuntas, Deniz Kadir Takci, Kamuran Kara, Sezai Elagoz
Publikováno v:
Applied Surface Science. 318:157-163
9th Nanoscience and Nanotechnology Conference (NANOTR) -- JUN 24-28, 2013 -- Erzurum, TURKEY
WOS: 000344380500030
ZnO and nitrogen-doped ZnO thin films were prepared onto glass substrate by pulsed filtered cathodic vacuum arc deposition (PF
WOS: 000344380500030
ZnO and nitrogen-doped ZnO thin films were prepared onto glass substrate by pulsed filtered cathodic vacuum arc deposition (PF
Publikováno v:
Volume: 38, Issue: 2 238-244
Turkish Journal of Physics
Turkish Journal of Physics
TUBITAK
In this study, ZnO films were prepared on p-Si substrates using the pulsed filtered cathodic vacuum arc deposition (PFCVAD) method. We report the effect of annealing temperature on structural and optical properties. The crystallographic
In this study, ZnO films were prepared on p-Si substrates using the pulsed filtered cathodic vacuum arc deposition (PFCVAD) method. We report the effect of annealing temperature on structural and optical properties. The crystallographic
Publikováno v:
Volume: 38, Issue: 1 111-117
Turkish Journal of Physics
Turkish Journal of Physics
TUBITAK
A ZnO:Al (10%) thin film was prepared on GaAs(100) substrate by using a pulsed filtered cathodic vacuum arc deposition (PFCVAD) system. The ZnO:Al thin film was thermally annealed for 1 h at 2 di erent temperatures in air. The film struc
A ZnO:Al (10%) thin film was prepared on GaAs(100) substrate by using a pulsed filtered cathodic vacuum arc deposition (PFCVAD) system. The ZnO:Al thin film was thermally annealed for 1 h at 2 di erent temperatures in air. The film struc