Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Kamruzzaman Chowdhury"'
Publikováno v:
Applied Intelligence for Industry 4.0 ISBN: 9781003256083
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc385eaaae58d6ce6a6ca092713d8795
https://doi.org/10.1201/9781003256083-17
https://doi.org/10.1201/9781003256083-17
Publikováno v:
International Symposium on Microelectronics. 2010:000505-000512
The objective of the research is to understand the effect of chemical treatment's etching times on via wall roughness; and the direct current (DC) and reverse pulse plating (RPP) of vias fabricated using micro mechanical punching process on liquid cr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::981721fdd6f36ddf395029790fecc19b
https://doi.org/10.4071/isom-2010-wa5-paper2
https://doi.org/10.4071/isom-2010-wa5-paper2
Autor:
Hugo Bender, Roger Loo, J.P. Lu, Andriy Hikavyy, B. Vissouvanadin, Vladimir Machkaoutsan, Mohammad Kamruzzaman Chowdhury, Peter Verheyen, Pierre Tomasini, Cor Claeys, S.G Thomas, Eddy Simoen, R. Wise, J.W. Weijtmans, Mireia Bargallo Gonzalez
Publikováno v:
IEEE Transactions on Electron Devices. 55:925-930
This paper studies the leakage current components in embedded Si1-x,Gex, source/drain (S/D) p+-n junctions, with different Ge contents, varying between 20% and 35%. In addition, the impact of performing a highly doped drain (HDD) implantation before
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb2850a9a8ebe1bcb28e47173969a343
https://doi.org/10.1109/ted.2007.914843
https://doi.org/10.1109/ted.2007.914843
Autor:
S.G Thomas, Cor Claeys, J. Geypen, Hugo Bender, M. Kamruzzaman Chowdhury, Nada Bhouri, Eddy Simoen, Peter Verheyen, Olivier Richard, Pierre Tomasini, B. Vissouvanadin, V. Machkaoutsan, J.P. Lu, Roger Loo, R. Wise, J.W. Weijtmans, Mireia Bargallo Gonzalez, H. Hikavyy
Publikováno v:
Solid State Phenomena. :95-100
This paper presents an investigation of the impact of a Highly Doped Drain (HDD) implantation after epitaxial deposition on Si1-xGex S/D junction characteristics. While the no HDD diodes exhibit the usual scaling of the leakage current density with P
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08bdb78a7eeac2a117690a9c17a68a75
https://doi.org/10.4028/www.scientific.net/ssp.131-133.95
https://doi.org/10.4028/www.scientific.net/ssp.131-133.95
Publikováno v:
Journal of Micromechanics and Microengineering. 17:1710-1714
In this work, we present the use of a PDMS (poly(dimethylsiloxane)) curing-agent as the intermediate layer for adhesive full-wafer bonding suitable for fabrication of microfluidic structures. The curing-agent of the two-component silicone rubber (Syl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0aa8bdd7d8eb9be629ecd91a827cc24
https://doi.org/10.1088/0960-1317/17/8/038
https://doi.org/10.1088/0960-1317/17/8/038
Autor:
Frederik Leys, Shawn G. Thomas, R. Wise, Roger Loo, J.W. Weijtmans, Nada Bhouri, Cor Claeys, Peter Verheyen, Vladimir Machkaoutsan, J.P. Lu, Eddy Simoen, Pierre Tomasini, Mireia Bargallo Gonzalez, Olivier Richard, Mohammad Kamruzzaman Chowdhury
Publikováno v:
ECS Transactions. 6:389-396
This paper presents an investigation of the effect of the relaxation on the electrical performance of recessed Si1-xGex source/drain junctions. It is shown, that the peripheral leakage current density scales exponentially with the total epilayer thic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13bd7ebc222cf4ee6fb900b94264d4a3
https://doi.org/10.1149/1.2727424
https://doi.org/10.1149/1.2727424
Publikováno v:
2010 Proceedings 60th Electronic Components and Technology Conference (ECTC).
The purpose of this paper is to present new findings in process variability for wet chemical etching and subsequent plasma cleaning of mechanically punched micro vias fabricated in liquid crystal polymer (LCP) substrate. It was observed that the micr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1804d7e034feb523eabca32079a304a
https://doi.org/10.1109/ectc.2010.5490823
https://doi.org/10.1109/ectc.2010.5490823
Autor:
M. Kamruzzaman Chowdhury, B. Vissouvanadin, Mireia Bargallo Gonzalez, N. Bhouri, Peter Verheyen, H. Hikavyy, O. Richard, J. Geypen, H. Bender, Roger Loo, C. Claeys, Eddy Simoen, V. Machkaoutsan, P. Tomasini, S.G Thomas, J.P. Lu, J.W. Weijtmans, R. Wise
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19c56e99951d79a816bc1951e059a08c
https://doi.org/10.4028/3-908451-43-4.95
https://doi.org/10.4028/3-908451-43-4.95
Autor:
Cor Claeys, Eddy Simoen, Mohammad Kamruzzaman Chowdhury, Nada Bhouri, Peter Verheyen, Frederik Leys, Olivier Richard, Roger Loo, Vladimir Machkaoutsan, Pierre Tomasini, Shawn Thomas, Jiong Ping Lu, J.W Weijtmans, R. Wise
Publikováno v:
ECS Meeting Abstracts. :601-601
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82b044502e228129a71763c4d6a3d078
https://doi.org/10.1149/ma2007-01/12/601
https://doi.org/10.1149/ma2007-01/12/601
Autor:
Kamruzzaman Chowdhury, M., Vissouvanadin, B., Bargallo Gonzalez, Mireia, Bhouri, N., Verheyen, Peter, Hikavyy, H., Richard, O., Geypen, J., Bender, H., Loo, Roger, Claeys, C., Simoen, Eddy, Machkaoutsan, V., Tomasini, P., Thomas, S.G, Lu, J.P., Weijtmans, J.W., Wise, R.
Publikováno v:
Diffusion and Defect Data Part B: Solid State Phenomena; October 2007, Vol. 131 Issue: 1 p95-100, 6p