Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Kamonchanok Khoklang"'
Autor:
Megumi Akai-Kasaya, Yuji Kuwahara, Akira Saito, Kamonchanok Khoklang, Pawel Krukowski, Songpol Chaunchaiyakul, Takeshi Yano
Publikováno v:
Carbon. 99:642-648
The relationship between the 2D and G band intensities and the number of walls of a multiwalled carbon nanotube was investigated by tip-enhanced Raman spectroscopy, which enables spatial resolution of nanometer order. The 2D band to G band integrated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd1fa1a8ca90b5a1f15af9a13ff825b8
https://doi.org/10.1016/j.carbon.2015.12.090
https://doi.org/10.1016/j.carbon.2015.12.090
Autor:
Somchai Ratanathammaphan, Supachok Thainoi, Patchareewan Prongjit, Maetee Kunrugsa, Suwit Kiravittaya, Somsak Panyakeow, Kamonchanok Khoklang
Publikováno v:
Journal of Crystal Growth. 425:291-294
We report on the molecular beam epitaxial growth of self-assembled GaSb quantum dots (QDs) on (0 0 1) GaAs substrates with an insertion layer. The insertion layer, which is a 4-monolayers (MLs) InxGa1−xAs (x=0.00, 0.07, 0.15, 0.20 and 0.25), is gro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43a0abe075f74566f6e76f18825d0625
https://doi.org/10.1016/j.jcrysgro.2015.02.044
https://doi.org/10.1016/j.jcrysgro.2015.02.044
Autor:
Somsak Panyakeow, Somchai Ratanathammaphan, Suwit Kiravittaya, Kamonchanok Khoklang, Supachok Thainoi
Publikováno v:
2015 12th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON).
GaSb quantum dots (QDs) have been grown by solid-source molecular beam epitaxy on a 4-monolayer (ML) In x Ga 1−x As (x = 0.07, 0.15, 0.20 and 0.25) to investigate the effects of In-mole-fraction of InGaAs insertion layers on the structural and opti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53150f3351ffaa25771650703c6f0f45
https://doi.org/10.1109/ecticon.2015.7206945
https://doi.org/10.1109/ecticon.2015.7206945
Autor:
Kamonchanok Khoklang, Patchareewan Prongjit, Somsak Panyakeow, Somchai Ratanathammaphan, Maetee Kunrugsa
Publikováno v:
2014 International Conference on Nanoscience and Nanotechnology.
We present the fabrication of GaSb quantum rings (QRs) on the GaAs (001) substrates by droplet epitaxy technique using solid-source molecular beam epitaxy (MBE). In droplet epitaxy process, Ga was deposited on GaAs surface to form liquid Ga droplets
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f11fae90cad1eea1e449a9ef57dfd122
https://doi.org/10.1109/iconn.2014.6965255
https://doi.org/10.1109/iconn.2014.6965255
Autor:
Somsak Panyakeow, Kamonchanok Khoklang, Suwit Kiravittaya, Somchai Ratanathammaphan, Supachok Thainoi
Publikováno v:
ECTI Transactions on Computer and Information Technology (ECTI-CIT). 10:129-135
GaSb quantum dots (QDs) have been grown by solid-source molecular beam epitaxy on a 4-monolayer (ML) InxGa1-xAs (x = 0.07, 0.15, 0.20, and 0.25) to investigate the effects of In-mole-fraction of InGaAs insertion layers on the structural and optical p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68d2e15479d39871e300db33416b15cc
https://doi.org/10.37936/ecti-cit.2016102.75144
https://doi.org/10.37936/ecti-cit.2016102.75144