Zobrazeno 1 - 10
of 78
pro vyhledávání: '"Kammler, T"'
Publikováno v:
In Thin Solid Films 2010 518(10):2834-2838
Publikováno v:
In Materials Science & Engineering B 2008 154:90-94
Autor:
Waidmann, S., Kahlert, V., Streck, C., Press, P., Kammler, T., Dittmar, K., Zienert, I., Rinderknecht, J.
Publikováno v:
In Microelectronic Engineering 2006 83(11):2282-2286
Publikováno v:
In Materials Science & Engineering B 2004 114:42-45
Publikováno v:
In Materials Science & Engineering B 2004 114:228-231
Publikováno v:
In Microelectronic Engineering 2003 70(2):226-232
Publikováno v:
In Microelectronic Engineering 2002 64(1):143-149
In order to enhance the performance of CMOS transistors, embedded epitaxial layers of Si:C and SiGe are being investigated. It is crucial to the application to avoid strain relaxation of those layers. In this work, a comparative study of the relaxati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::2a8c349d47fd5b78b67580cf8373a4f1
https://publica.fraunhofer.de/handle/publica/220729
https://publica.fraunhofer.de/handle/publica/220729
Autor:
Hoentschel, J., Wei, A., Wiatr, M., Gehring, A., Scheiper, T., Mulfinger, R., Feudel, T., Lingner, T., Poock, A., Muehle, S., Krueger, C., Herrmann, T., Klix, W., Stenzel, R., Stephan, R., Huebler, P., Kammler, T., Shi, P., Raab, M., Greenlaw, D.
Publikováno v:
2008 IEEE International Electron Devices Meeting; 2008, p1-4, 4p
Autor:
Wiatr, M., Feudel, T., Wei, A., Mowry, A., Boschke, R., Javorka, P., Gehring, A., Kammler, T., Lenski, M., Frohberg, K., Richter, R., Horstmann, M., Greenlaw, D.
Publikováno v:
2007 15th International Conference on Advanced Thermal Processing of Semiconductors; 2007, p19-29, 11p