Technology development of high-quality n-type multicrystalline silicon for next-generation ultra-thin crystalline silicon solar cells

Autor: Dhamrin, M., Saitoh, T., Kamisako, K., Yamada, K., Araki, N., Yamaga, I., Sugimoto, H., Tajima, M.

Publikováno v: In Solar Energy Materials and Solar Cells 2009 93(6):1139-1142

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Minority-carrier trapping in Ga-doped multicrystalline Si wafers

Autor: Dhamrin, M., Schmiga, C., Kamisako, K., Saitoh, T.

Publikováno v: In Solar Energy Materials and Solar Cells 2006 90(18):3179-3186

Photoluminescence analysis of intragrain defects in multicrystalline silicon wafers for solar cells.

Autor: Sugimoto, H., Araki, K., Tajima, M., Eguchi, T., Yamaga, I., Dhamrin, M., Kamisako, K., Saitoh, T.

Publikováno v: Journal of Applied Physics; 9/1/2007, Vol. 102 Issue 5, p054506, 5p, 1 Color Photograph, 3 Black and White Photographs, 1 Diagram, 1 Graph

Passivation Films Prepared by Using TiO2-SiO2 Composite Solution

Autor: Yoshiba, S., Tanitsu, K., Uzum, A., Dhamrin, M., Suda, Y., Kamisako, K.

28th European Photovoltaic Solar Energy Conference and Exhibition; 1908-1910
Excellent surface passivation quality is one of the main challenging issues to realize high efficiency crystalline silicon solar cells. Low-cost and simple fabrication

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