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pro vyhledávání: '"Kamila Stefańska-Skrobas"'
Autor:
Paweł Kamiński, Andrzej Turos, Roman Kozłowski, Kamila Stefańska-Skrobas, Jarosław Żelazko, Ewa Grzanka
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-9 (2024)
Abstract The properties and concentrations of deep-level defects induced by implantations of Si and Mg ions into unintentionally doped (UID) epitaxial GaN have been revealed by using the Laplace-transform photoinduced transient spectroscopy (LPITS) a
Externí odkaz:
https://doaj.org/article/73a7eef77260460393b77239bacc4ceb
