Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Kamal Hosen"'
Publikováno v:
Computational Engineering and Physical Modeling, Vol 7, Iss 4 (2024)
This study investigates the use of recycled concrete aggregates (RCA) from deconstructed bridges and rice husk ash (RHA) from brick kiln residue in concrete production. By substituting 20% of cement with RHA, the research aimed to enhance sustainabil
Externí odkaz:
https://doaj.org/article/3e44e41b2d3c4370a8802cb32140fe84
Autor:
Kamal Hosen
Publikováno v:
Computational Engineering and Physical Modeling, Vol 7, Iss 3 (2024)
Shear walls are one of the most popular lateral load-resisting methods used in high-rise structures. Major design factors against structural collapse in RC buildings include lateral stresses (wind, seismic). Notably, in Bangladesh, shear walls are st
Externí odkaz:
https://doaj.org/article/0c3da611de4d45a1b0177ffd7583a1ef
Autor:
Kamal Hosen
Publikováno v:
Computational Engineering and Physical Modeling, Vol 7, Iss 2 (2024)
The occurrence of building collapses or severe damages during powerful earthquakes has led to substantial economic losses, severe injuries, and loss of human lives. Retrofitting has gained global popularity, especially for vital structures like histo
Externí odkaz:
https://doaj.org/article/7dec47e350a54f329e9833f7aa78670c
Publikováno v:
IEEE Access, Vol 10, Pp 30323-30334 (2022)
We demonstrated a nanowire gate-all-around (GAA) negative capacitance (NC) tunnel field-effect transistor (TFET) based on the GaAs/InN heterostructure using TCAD simulation. In the gate stacking, we proposed a tri-layer HfO2/TiO2/HfO2 as a high-K die
Externí odkaz:
https://doaj.org/article/7714c6ff14514f13b07734dc706d29ad
Publikováno v:
IEEE Access, Vol 9, Pp 116254-116264 (2021)
Gate-all-around (GAA) field effect transistors (FETs) have appeared as one of the potential candidates for the electrostatic integrity required to reduce MOSFETs to minimum channel lengths. Meanwhile, the negative capacitance effect of ferroelectrics
Externí odkaz:
https://doaj.org/article/7e1bd9055e9347cdb1564059dabddf2d
Autor:
Minhaz Uddin Sohag, Md. Sherajul Islam, Kamal Hosen, Md. Al Imran Fahim, Md. Mosarof Hossain Sarkar, Jeongwon Park
Publikováno v:
Results in Physics, Vol 29, Iss , Pp 104796- (2021)
Continuous downscaling of CMOS technology at the nanometer scale with conventional MOSFETs leads to short channel effects (SCE), increased subthreshold slope (SS), and leakage current, degrading the performance of ICs. We proposed a dual-source verti
Externí odkaz:
https://doaj.org/article/7d384c13e17f48148dbcdbd27f19ff5f
Autor:
Kamal Hosen, R.H. Victora
Publikováno v:
IEEE Transactions on Magnetics. 59:1-7
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2add361535df6082cd4baedda118e092
https://doi.org/10.1109/tmag.2023.3262569
https://doi.org/10.1109/tmag.2023.3262569
Publikováno v:
IEEE Access. 10:30323-30334
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d964c34f7766c1b898ea0fd60227c51
https://doi.org/10.1109/access.2022.3159809
https://doi.org/10.1109/access.2022.3159809
Publikováno v:
IEEE Access, Vol 9, Pp 116254-116264 (2021)
Gate-all-around (GAA) field effect transistors (FETs) have appeared as one of the potential candidates for the electrostatic integrity required to reduce MOSFETs to minimum channel lengths. Meanwhile, the negative capacitance effect of ferroelectrics
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e5b54522efb32b272e810c2c892e3e9f
https://ieeexplore.ieee.org/document/9514875/
https://ieeexplore.ieee.org/document/9514875/
Publikováno v:
Chinese Journal of Chemical Physics. 33:757-763
The effect of channel length and width on the large and small-signal parameters of the graphene field effect transistor have been explored using an analytical approach. In the case of faster saturation as well as extremely high transit frequency, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::427aba6c11e49f8ed1e9f81d456c7bee
https://doi.org/10.1063/1674-0068/cjcp2004055
https://doi.org/10.1063/1674-0068/cjcp2004055