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pro vyhledávání: '"Kam F. Yee"'
Publikováno v:
IEEE Electron Device Letters. 17:331-333
The drain-induced-barrier-lowering (DIBL) considerations of the extended drain structure were studied using two-dimensional (2-D) device simulations in the tenth-micrometer regime. We found that the drain extension length must be kept at a minimum in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::465287fe5581a56202c78888e45d8da9
https://doi.org/10.1109/55.506358
https://doi.org/10.1109/55.506358
Publikováno v:
SPIE Proceedings.
As MOSFET feature sizes are scaled down to 0.1 micrometers and below, new techniques are required to develop and fabricate shallow, low contact resistance, and low leakage S/D junctions. In this study, 2D device simulations have been performed to com
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdc86348d2e94c673b08d6d82a9f36f8
https://doi.org/10.1117/12.250863
https://doi.org/10.1117/12.250863
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