Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Kalyankumar Das"'
Publikováno v:
Journal of Applied Physics. 76:2208-2212
Low resistance ohmic contacts have been formed on diamond films using bilayer structures of TiC/Au or TaSi2/Au. The initial films of TiC or TaSi2 were sputter‐deposited from preformed targets. The overlying Au film was deposited by e‐beam evapora
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e03785fe71f397c4e95022ef0c912559
https://doi.org/10.1063/1.358510
https://doi.org/10.1063/1.358510
Publikováno v:
Journal of Applied Physics. 74:1179-1187
Low‐resistance ohmic contacts have been fabricated on a naturally occurring B‐doped diamond crystal and on polycrystalline diamond films by B ion implantation and subsequent Ti/Au bilayer metallization. A high B concentration was obtained at the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4d48c7df963d290e213c6683d93eba8
https://doi.org/10.1063/1.354918
https://doi.org/10.1063/1.354918
Publikováno v:
Journal of Electronic Materials. 22:391-398
Naturally occurring semiconducting single crystal (type IIb) diamonds and boron doped polycrystalline thin films were characterized by differential capacitance-voltage and Hall effect measurements, as well as secondary ion mass spectroscopy (SIMS). R
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10de95b59845677b53b1239d6bc952f4
https://doi.org/10.1007/bf02661667
https://doi.org/10.1007/bf02661667
Publikováno v:
Diamond and Related Materials. 2:841-846
The transport properties of type IIb (naturally B-doped), single-crystal diamond were investigated by differential capacitance-voltage ( C - V ) measurements, Hall effect measurements and resistivity measurements. The results for the Hall effect and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a41384756e4592aba3e077a81515f1c6
https://doi.org/10.1016/0925-9635(93)90235-t
https://doi.org/10.1016/0925-9635(93)90235-t
Publikováno v:
ChemInform. 23
In this paper, the effect of thin interfacial films of SiO[sub 2] ([approximately] 20 [Angstrom]) on the electrical characteristics of metal contacts fabricated on polycrystalline and homepitaxial diamond films is studied. The diamond films were grow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6c1ef3f356f4c2a91e5f511a85231be
https://doi.org/10.1002/chin.199230252
https://doi.org/10.1002/chin.199230252
Publikováno v:
Thin Solid Films. 212:19-24
The formation of closely spaced selected area ohmic and rectifying contacts on a given semiconductor surface is of fundamental interest for the fabrication of transistor type devices. However, it has been observed that the formation of good ohmic or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0801ad8f9235057c7a1d3ab9db693be9
https://doi.org/10.1016/0040-6090(92)90494-v
https://doi.org/10.1016/0040-6090(92)90494-v
Publikováno v:
Journal of The Electrochemical Society. 139:1445-1449
In this paper, the effect of thin interfacial films of SiO[sub 2] ([approximately] 20 [Angstrom]) on the electrical characteristics of metal contacts fabricated on polycrystalline and homepitaxial diamond films is studied. The diamond films were grow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76db78748e95e41e2bc20a0b04bd22d8
https://doi.org/10.1149/1.2069428
https://doi.org/10.1149/1.2069428
Publikováno v:
Diamond and Related Materials. 1:89-92
The first demonstration of field-effect transistors fabricated from polycrystalline diamond thin films is reported. Diamond thin films were deposited by a microwave plasma chemical vapor deposition technique. The surface roughness was removed by poli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f66b38429e7c345d426fbcee58023b56
https://doi.org/10.1016/0925-9635(92)90005-9
https://doi.org/10.1016/0925-9635(92)90005-9
Publikováno v:
Journal of Applied Physics. 69:3142-3148
Crystal/material quality and electrical properties of B‐doped diamond films synthesized by microwave plasma chemical vapor deposition were investigated. Raman spectroscopy verified the presence of diamond and indicated that the crystal quality incr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09d393d2d9eceea4408c9be9c6f54eb9
https://doi.org/10.1063/1.348582
https://doi.org/10.1063/1.348582
Publikováno v:
Applied Physics Letters. 63:1065-1067
Differential capacitance‐voltage (C‐V) measurements were performed on Al and Pt rectifying contacts fabricated on natural (type IIb) diamonds. The C‐V data showed frequency dependence, which decreased significantly after reducing the back conta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d449c49728c7081ffbce2103f7344b6d
https://doi.org/10.1063/1.109834
https://doi.org/10.1063/1.109834