Zobrazeno 1 - 10
of 370
pro vyhledávání: '"Kalyani D"'
Autor:
Shania Rehman, Muhammad Asghar Khan, Honggyun Kim, Harshada Patil, Jamal Aziz, Kalyani D. Kadam, Malik Abdul Rehman, Muhammad Rabeel, Aize Hao, Karim Khan, Sungho Kim, Jonghwa Eom, Deok‐kee Kim, Muhammad Farooq Khan
Publikováno v:
Advanced Science, Vol 10, Iss 17, Pp n/a-n/a (2023)
Abstract To avoid the complexity of the circuit for in‐memory computing, simultaneous execution of multiple logic gates (OR, AND, NOR, and NAND) and memory behavior are demonstrated in a single device of oxygen plasma‐treated gallium selenide (Ga
Externí odkaz:
https://doaj.org/article/c90e3b81707845f38e9e0e7adf91ad2e
Autor:
Jamal Aziz, Honggyun Kim, Shania Rehman, Muhammad Farooq Khan, Kalyani D. Kadam, Harshada Patil, Sikandar Aftab, Ghulam Dastgeer, Deok‐kee Kim
Publikováno v:
Advanced Electronic Materials, Vol 8, Iss 4, Pp n/a-n/a (2022)
Abstract Transparent and flexible diodes could be useful for future transparent electronics. Here such diodes are discussed with electrical breakdown (EBR) comprises of W/ZnO/ITO structure on the polyethylene terephthalate substrates. The three‐lay
Externí odkaz:
https://doaj.org/article/ddfc6582ae2e4f2085cecb5784476210
Autor:
Shilpa S. More, Pratiksha A. Patil, Kalyani D. Kadam, Harshada S. Patil, Snehal L. Patil, Aishwarya V. Pawar, Sharon S. Kanapally, Dhanashri V. Desai, Shraddha M. Bodake, Rajanish K. Kamat, Sungjun Kim, Tukaram D. Dongale
Publikováno v:
Results in Physics, Vol 12, Iss , Pp 1946-1955 (2019)
The massively parallel computing capabilities of the human brain can be mimicked with the help of neuromorphic computing approach and this can be achieved by developing the electronic synaptic device. In the present work, we have synthesized gallium-
Externí odkaz:
https://doaj.org/article/f3f2c2cb753c4937ac2363d04979a68d
Autor:
Harshada Patil, Honggyun Kim, Shania Rehman, Kalyani D. Kadam, Jamal Aziz, Muhammad Farooq Khan, Deok-kee Kim
Publikováno v:
Nanomaterials, Vol 11, Iss 2, p 359 (2021)
Organic nonvolatile memory devices have a vital role for the next generation of electrical memory units, due to their large scalability and low-cost fabrication techniques. Here, we show bipolar resistive switching based on an Ag/ZnO/P3HT-PCBM/ITO de
Externí odkaz:
https://doaj.org/article/5ef6692035124ff7a592ac3bf416b872
Autor:
Aziz, Jamal, Khan, Muhammad Farooq, Neumaier, Daniel, Miao, Zhuang, Elahi, Ehsan, Kim, Honggyun, Chavan, Vijay D., Ghafoor, Faisal, Ghfar, Ayman A., Kadam, Kalyani D., Patil, Harshada
Publikováno v:
In Journal of Alloys and Compounds 5 October 2024 1001
Publikováno v:
Asian Journal of Medical Sciences, Vol 15, Iss 1, Pp 3-9 (2024)
Background: The pandemic coronavirus disease 2019 (COVID-19) caused by the new severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2) has resulted in a worldwide abrupt and significant rise in admissions for pneumonia with multiorgan diseases.
Externí odkaz:
https://doaj.org/article/dcb858521d3546b483b8a8833478184c
Autor:
Chavan, Vijay D., Patil, Priyanka D., Patil, Chandrashekhar S., Patil, Swapnil R., Katkar, Pranav K., Sheikh, Zulfqar Ali, Ustad, Ruhan E., Kim, Honggyun, Kadam, Kalyani D., Patil, Harshada S., Aziz, Jamal, Elahi, Ehsan, Ahmad, Muneeb, Rabeel, Muhammad, Ghafoor, Faisal, Nasir, Sobia, Sajjad, Laraib, Shinde, Sambhaji, Dongale, Tukaram D., Kim, Deok-kee
Publikováno v:
In Journal of Energy Storage 30 May 2024 88
Autor:
Kadam, Kalyani D., Kim, Honggyun, Khan, Muhammad Farooq, Patil, Harshada, Rehman, Shania, Ahmad, Muneeb, Aziz, Jamal, Nasir, Naila, Kim, Kyu Young, Kim, Deok-kee
Publikováno v:
In Surfaces and Interfaces January 2024 44
Autor:
Patil, Harshada, Rehman, Shania, Kim, Honggyun, Kadam, Kalyani D., Khan, Muhammad Asghar, Khan, Karim, Aziz, Jamal, Ismail, Muhammad, Khan, Muhammad Farooq, Kim, Deok-kee
Publikováno v:
In Journal of Colloid And Interface Science 15 December 2023 652 Part A:836-844
Autor:
Aziz, Jamal, Khan, Muhammad Farooq, Neumaier, Daniel, Ahmad, Muneeb, Kim, Honggyun, Rehman, Shania, Elahi, Ehsan, Chavan, Vijay D., Ghafoor, Faisal, Kadam, Kalyani D., Patil, Harshada, Ouladsmane, Mohamed
Publikováno v:
In Materials Science & Engineering B November 2023 297