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Enhanced spin-orbit scattering length in narrow Al_xGa_{1-x}N/GaN wires

Autor: Lehnen, P., Schapers, Th., Kaluza, N., Thillosen, N., Hardtdegen, H.

The magnetotransport in a set of identical parallel AlGaN/GaN quantum wire structures was investigated. The width of the wires was ranging between 1110 nm and 340 nm. For all sets of wires clear Shubnikov--de Haas oscillations are observed. We find t

Externí odkaz: http://arxiv.org/abs/0704.3146

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Akademický článek

Influence of the reactor inlet configuration on the AlGaN growth efficiency

Autor: Yakovlev, E.V., Talalaev, R.A., Kaluza, N., Hardtdegen, H., Bay, H.L.

Publikováno v: In Journal of Crystal Growth 2007 298:413-417

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Akademický článek

Intra-atomic photoluminescence at 1.41 eV of substitutional Mn in GaMnN of high optical quality.

Autor: Zenneck, J., Niermann, T., Mai, D., Roever, M., Kocan, M., Malindretos, J., Seibt, M., Rizzi, A., Kaluza, N., Hardtdegen, H.

Publikováno v: Journal of Applied Physics; 3/15/2007, Vol. 101 Issue 6, p1-4, 3p, 3 Graphs

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Suppression of weak antilocalization in AlxGa1-xN/GaN two-dimensional electron gas by an in-plane magnetic field

Autor: Cabanas, S., Schäpers, T., Thillosen, N., Kaluza, N., Guzenko, V. A., Hardtdegen, H.

Publikováno v: Physical review / B 75(19), 195329 (2007). doi:10.1103/PhysRevB.75.195329

We studied the suppression of weak antilocalization in an AlxGa1-xN/GaN two-dimensional electron gas in the presence of an additional in-plane magnetic field. By comparing our experimental data to a theoretical model, we concluded that the suppressio

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______3364::fab1619124634838089624c4a9edac21
https://hdl.handle.net/2128/2621

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Weak antilocalization in gate-controlled Al/sub x/Ga/sub 1-x/N/GaN two-dimensional electron gases

Autor: Thillosen, N., Cabañas, S., Kaluza, N., Guzenko, V.A., Hardtdegen, H., Schäpers, T.

Publikováno v: Physical review / B 73(24), 241311 (2006). doi:10.1103/PhysRevB.73.241311

Weak antilocalization and the Shubnikov-de Haas effect were investigated in AlxGa1-xN/GaN two-dimensional electron gases. The weak antilocalization measurements on a gated sample revealed a constant spin-orbit scattering length, which does not change

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______3364::cf6eb49cd2a80e21f96d095b03ffa9e3
https://hdl.handle.net/2128/2620

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