Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Kalparupa Mukherjee"'
Autor:
Kalparupa Mukherjee, Carlo De Santi, Matteo Buffolo, Matteo Borga, Shuzhen You, Karen Geens, Benoit Bakeroot, Stefaan Decoutere, Andrea Gerosa, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Publikováno v:
Micromachines, Vol 12, Iss 4, p 445 (2021)
This work investigates p+n−n GaN-on-Si vertical structures, through dedicated measurements and TCAD simulations, with the ultimate goal of identifying possible strategies for leakage and breakdown optimization. First, the dominant leakage processes
Externí odkaz:
https://doaj.org/article/750e956e6aa847fd82068bdb34450216
Autor:
Nicola Roccato, Francesco Piva, Carlo De Santi, Riccardo Brescancin, Kalparupa Mukherjee, Matteo Buffolo, Camille Haller, Jean-Francois Carlin, Nicolas Grandjean, Marco Vallone, Alberto Tibaldi, Francesco Bertazzi, Michele Goano, Giovanni Verzellesi, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Publikováno v:
Gallium Nitride Materials and Devices XVII.
Deep defects have a fundamental role in determining the electro-optical characteristics and in the efficiency of InGaN light-emitting diodes (LEDs). However, modeling their effect on the electrical characteristics of the LED is not straightforward.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1ac637356602b16f7ebf7e15c0169c9f
https://doi.org/10.1117/12.2606560
https://doi.org/10.1117/12.2606560
Autor:
Kalparupa Mukherjee, Alessandro Caria, Carlo De Santi, Kazuki Nomoto, Hugues Marchand, Xiang Gao, Zongyang Hu, Gaudenzio Meneghesso, Huili Grace Xing, Elena Fabris, Debdeep Jena, Enrico Zanoni, Wenshen Li, Matteo Meneghini
Publikováno v:
IEEE Transactions on Electron Devices. 67:3978-3982
We demonstrate that the residual carbon concentration in the drift region can have a significant impact on the reverse leakage, breakdown voltage, and breakdown stability of GaN-on-GaN vertical diodes. Two generations (Gen1, Gen2) of polarization-dop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f9d18adeb1cbad3eef0722878c780b3c
https://doi.org/10.1109/ted.2020.2993192
https://doi.org/10.1109/ted.2020.2993192
Autor:
Matteo Buffolo, Nicola Roccato, Francesco Piva, Carlo De Santi, Riccardo Brescancin, Claudia Casu, Alessandro Caria, Kalparupa Mukherjee, Camille Haller, Jean Francois Carlin, Nicolas Grandjean, Marco Vallone, Alberto Tibaldi, Francesco Bertazzi, Michele Goano, Giovanni Verzellesi, Mauro Mosca, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
III-N light-emitting-diodes (LEDs) are subject of intense investigations, thanks to their high efficiency and great reliability. The quality of the semiconductor material has a significant impact on the electro-optical performance of LEDs: for this r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b35194ca45d6cb673043fae46773ba24
http://hdl.handle.net/11577/3455439
http://hdl.handle.net/11577/3455439
Autor:
Carlo De Santi, B. Jonas Ohlsson, Dirk Fahle, Herwig Hahn, Kalparupa Mukherjee, Martin Berg, Matteo Borga, Michael Heuken, Karen Geens, Peter Ramvall, Stefaan Decoutere, Shuzhen You, Matteo Meneghini, Mikael T. Björk, Enrico Zanoni, Hu Liang, Ashutosh Kumar
Publikováno v:
Microelectronics Reliability
This paper reviews recent progress and key challenges in process and reliability for high-performance vertical GaN transistors and diodes, focusing on the 200 mm CMOS-compatible technology. We particularly demonstrated the potential of using 200 mm d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e32a9fc8bb80660196396aa65efdfa87
Autor:
F. Piva, Nicola Roccato, Enrico Zanoni, Francesco Bertazzi, Gaudenzio Meneghesso, Giovanni Verzellesi, Riccardo Brescancin, Carlo De Santi, Jean-François Carlin, Camille Haller, Alberto Tibaldi, Nicolas Grandjean, Matteo Buffolo, Matteo Meneghini, Kalparupa Mukherjee, Michele Goano, Marco Vallone
Defects can significantly modify the electro-optical characteristics of InGaN light-emitting diodes (LEDs); however, modeling the impact of defects on the electrical characteristics of LEDs is not straightforward. In this paper, we present an extensi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6cae975d5a3d64b7c4c4007e3e543f3f
http://hdl.handle.net/11577/3398478
http://hdl.handle.net/11577/3398478
Autor:
Carlo De Santi, Matteo Borga, Benoit Bakeroot, Enrico Zanoni, Kalparupa Mukherjee, Gaudenzio Meneghesso, Shuzhen You, Matteo Meneghini, Karen Geens, Stefaan Decoutere
Publikováno v:
IRPS
We demonstrate that the use of a bilayer gate oxide (2.5 nm Al 2 O 3 + 35 nm SiO 2 ) can substantially improve the reliability of GaN-on-Si vertical MOSFETs, with respect to a conventional uni-layer (35 nm Al 2 O 3 ) insulator. Specifically, we show
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::af3a4e01689a3c0c1617760a05f9d703
http://hdl.handle.net/11577/3344621
http://hdl.handle.net/11577/3344621
Autor:
Enrico Zanoni, M. Rzin, Kalparupa Mukherjee, Gaudenzio Meneghesso, Z. Gao, C. De Santi, Matteo Meneghini
This work is aimed at investigating the performance and reliability limits of a commercially available state-of-the-art RF GaN HEMT technology. Measurement strategies to recognize and assess trap-induced degradations, prevalent in mature technologies
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::13db65531ceb103f4ad3279166ada466
http://hdl.handle.net/11577/3329669
http://hdl.handle.net/11577/3329669
Autor:
Enrico Zanoni, Shuzhen You, Karen Geens, Stefaan Decoutere, Kalparupa Mukherjee, Gaudenzio Meneghesso, Hu Liang, Maria Ruzzarin, Matteo Meneghini, Carlo De Santi, Matteo Borga, Steve Stoffels
Publikováno v:
Applied Physics Express
We present a first study of threshold voltage instabilities of semi-vertical GaN-on-Si trench-MOSFETs, based on double pulsed, threshold voltage transient, and UV-assisted C–V analysis. Under positive gate stress, small negative V th shifts (low st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::810eb5722be3b0551d3a4c0d3616ef13
https://doi.org/10.35848/1882-0786/ab6ddd
https://doi.org/10.35848/1882-0786/ab6ddd
Autor:
Matteo Borga, Kalparupa Mukherjee, Carlo De Santi, Steve Stoffels, Karen Geens, Shuzhen You, Benoit Bakeroot, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Publikováno v:
Applied Physics Express; 2/1/2020, Vol. 13 Issue 2, p1-1, 1p