Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Kalpana Pathak"'
Publikováno v:
Anais Brasileiros de Dermatologia, Vol 92, Iss 6, Pp 801-806 (2017)
Abstract: Background: Narrow-band UVB is the most innovative steroid sparing treatment in atopic dermatitis. There are studies showing efficacy of Narrow-band UVB in childhood atopic dermatitis, but there is lack of clinical trials in the literature
Externí odkaz:
https://doaj.org/article/6790fbf841314664be8e16aaebbe92e7
Autor:
Matt Cogorno, Angada B. Sachid, Shiyu Sun, Nam-Sung Kim, Sushant Mittal, Myung Sun Kim, Toshihiko Miyashita, Kalpana Pathak, Ashish Pal
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
Selective fin trimming after dummy gate removal is proposed as the local fin width scaling approach for further FinFET extension. In this approach, local fin trimming is selectively performed for the channel region after dummy gate removal in the rep
Publikováno v:
Anais Brasileiros de Dermatologia v.92 n.6 2017
Anais brasileiros de dermatologia
Sociedade Brasileira de Dermatologia (SBD)
instacron:SBD
Anais Brasileiros de Dermatologia, Vol 92, Iss 6, Pp 801-806 (2017)
Anais Brasileiros de Dermatologia, Volume: 92, Issue: 6, Pages: 801-806, Published: DEC 2017
Anais Brasileiros de Dermatologia
Anais brasileiros de dermatologia
Sociedade Brasileira de Dermatologia (SBD)
instacron:SBD
Anais Brasileiros de Dermatologia, Vol 92, Iss 6, Pp 801-806 (2017)
Anais Brasileiros de Dermatologia, Volume: 92, Issue: 6, Pages: 801-806, Published: DEC 2017
Anais Brasileiros de Dermatologia
Background: Narrow-band UVB is the most innovative steroid sparing treatment in atopic dermatitis. There are studies showing efficacy of Narrow-band UVB in childhood atopic dermatitis, but there is lack of clinical trials in the literature determinin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::16f7f22fc9c242662edeaca98779a502
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0365-05962017000600801
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0365-05962017000600801
Autor:
G. Tholkappia Arasu, Kalpana Pathak
Publikováno v:
2015 International Conference on Electrical, Electronics, Signals, Communication and Optimization (EESCO).
This paper represents a comprehensive analysis of characteristics of shorted gate Fin Field Effect Transistor (FinFET). Multi-gate devices are more and more desired in high performance digital circuits and systems. These have added advantages of high