Zobrazeno 1 - 10
of 106
pro vyhledávání: '"Kalon, Gopinadhan"'
Autor:
Kaushik, Suvigya, Nemala, Siva Sankar, Kumar, Mukesh, Negi, Devesh, Dhal, Biswabhusan, Saini, Lalita, Banavath, Ramu, Saha, Surajit, Sharma, Sudhanshu, Kalon, Gopinadhan
Publikováno v:
Nano-Structures & Nano-Objects 32,100922(2022)
Liquid-phase exfoliation of two-dimensional materials is very attractive for large-scale applications. Although used extensively, isolating MoS2 layers (<10) with high efficiency is reported to be extremely difficult. Further, the importance of soaki
Externí odkaz:
http://arxiv.org/abs/2210.13813
Publikováno v:
Nat Commun 13, 498 (2022)
Interlayer space in graphite is impermeable to ions and molecules, including protons. Its controlled expansion would find several applications in desalination, gas purification, high-density batteries, etc. In the past, metal intercalation has been u
Externí odkaz:
http://arxiv.org/abs/2112.02826
Autor:
Griffin, Eoin, Mogg, Lucas, Hao, Guang-Ping, Kalon, Gopinadhan, Bacaksiz, Cihan, Lopez-Polin, Guillermo, Zhou, T. Y., Guarochico, Victor, Cai, Junhao, Neumann, Christof, Winter, Andreas, Mohn, Michael, Lee, Jong Hak, Lin, Junhao, Kaiser, Ute, Grigorieva, Irina V., Suenaga, Kazu, Ozyilmaz, Barbaros, Cheng, Hui-Min, Ren, Wencai, Turchanin, Andrey, Peeters, Francois M., Geim, Andre K., Lozada-Hidalgo, Marcelo
Defect-free graphene is impermeable to gases and liquids but highly permeable to thermal protons. Atomic-scale defects such as vacancies, grain boundaries and Stone-Wales defects are predicted to enhance graphene's proton permeability and may even al
Externí odkaz:
http://arxiv.org/abs/2005.09418
Autor:
Sahadevan, Ajeesh M., Kalitsov, Alan, Kalon, Gopinadhan, Bhatia, Charanjit S., Velev, Julian, Yang, Hyunsoo
We study experimentally the effect of electric field on the magnetization of Co/Al2O3 granular multilayers. We observe two distinct regimes: (a) low-field regime when the net magnetization of the system changes in a reversible way with the applied el
Externí odkaz:
http://arxiv.org/abs/1301.5396
Autor:
Sahadevan, Ajeesh M., Tiwari, Ravi K., Kalon, Gopinadhan, Bhatia, Charanjit S., Saeys, Mark, Yang, Hyunsoo
Publikováno v:
Applied Physics Letters 101, 042407 (2012)
We study the effect of strain on magnetic tunnel junctions (MTJ) induced by a diamond like carbon (DLC) film. The junction resistance as well as the tunnel magnetoresistance (TMR) reduces with the DLC film. Non-equilibrium Green's function quantum tr
Externí odkaz:
http://arxiv.org/abs/1208.3525
Publikováno v:
Applied Physics Letters 99, 083109 (2011)
Understanding the origin of hysteresis in the channel resistance from top gated graphene transistors is important for transistor applications. Capacitance - voltage measurements across the gate oxide on top gated bilayer graphene show hysteresis with
Externí odkaz:
http://arxiv.org/abs/1208.1831
Autor:
Qiu, Xue Peng, Shin, Young Jun, Niu, Jing, Kulothungasagaran, Narayanapillai, Kalon, Gopinadhan, Qiu, Caiyu, Yu, Ting, Yang, Hyunsoo
Publikováno v:
AIP Advances 2, 032121 (2012)
Deposition of various materials onto graphene without causing any disorder is highly desirable for graphene applications. Especially, sputtering is a versatile technique to deposit various metals and insulators for spintronics, and indium tin oxide t
Externí odkaz:
http://arxiv.org/abs/1208.1835
Publikováno v:
Applied Physics Letters 98, 233108 (2011)
Tunable and highly reproducible metal-insulator transitions have been observed in bilayer graphene upon thermal annealing at 400 K under high vacuum conditions. Before annealing, the sample is metallic in the whole temperature regime of study. Upon a
Externí odkaz:
http://arxiv.org/abs/1208.1828
Autor:
Shin, Young Jun, Wang, Yingying, Huang, Han, Kalon, Gopinadhan, Wee, Andrew Thye Shen, Shen, Zexiang, Bhatia, Charanjit Singh, Yang, Hyunsoo
Publikováno v:
Langmuir, 2010, 26 (6), pp 3798-3802
Contact angle goniometry is conducted for epitaxial graphene on SiC. Although only a single layer of epitaxial graphene exists on SiC, the contact angle drastically changes from 69{\deg} on SiC substrates to 92{\deg} with graphene. It is found that t
Externí odkaz:
http://arxiv.org/abs/1103.4667
Autor:
Shin, Young Jun, Kalon, Gopinadhan, Son, Jaesung, Kwon, Jae Hyun, Niu, Jing, Bhatia, Charanjit S., Liang, Gengchiau, Yang, Hyunsoo
Publikováno v:
APPLIED PHYSICS LETTERS 97, 252102 (2010)
Negative differential conductance and tunneling characteristics of two-terminal graphene devices are observed before and after electric breakdown, respectively. The former is caused by the strong scattering under a high E-field, and the latter is due
Externí odkaz:
http://arxiv.org/abs/1103.4665