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of 3
pro vyhledávání: '"Kaliteevsky, M. A."'
Lattice relaxation in twistronic bilayers with close lattice parameters and almost perfect crystallographic alignment of the layers results in the transformation of moir\'e pattern into a sequence of preferential stacking domains and domain wall netw
Externí odkaz:
http://arxiv.org/abs/2305.12848
Autor:
Godisov, O. N., Kaliteevsky, A. K., Safronov, A. Yu., Korolev, V. I., Ber, B. Ya., Davydov, V. Yu., Denisov, D. V., Kaliteevsky, M. A., Kop’ev, P. S., Kovarsky, A. P., Ustinov, V. M., Pohl, H.-J.
Publikováno v:
Semiconductors; Dec2002, Vol. 36 Issue 12, p1400, 3p
Autor:
Godisov, O. N., Kaliteevsky, A. K., Safronov, A. Yu., Korolev, V. I., Aruev, P. N., Ber, B. Ya., Davydov, V. Yu., Zabrodskaya, N. V., Zabrodsky, V. V., Kaliteevsky, M. A., Kop’ev, P. S., Kovarsky, A. P., Sukhanov, V. L.
Publikováno v:
Semiconductors; Dec2002, Vol. 36 Issue 12, p1398, 2p