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pro vyhledávání: '"Kalavagunta, Aditya"'
Autor:
Kalavagunta, Aditya
The demand for high power high frequency semiconductor devices has led to the development of microwave power devices using GaN and SiC. AlGaN/GaN HEMTs have shown power densities of 9.8 W/mm at 8 GHz. Although these results are very encouraging, sign
Autor:
Kalavagunta, Aditya.
Thesis (Ph. D. in Electrical Engineering)--Vanderbilt University, May 2009.
Title from title screen. Includes bibliographical references.
Title from title screen. Includes bibliographical references.
Publikováno v:
In Microelectronics Reliability March 2014 54(3):570-574
Autor:
Kalavagunta, Aditya1,2 aditya.kalavagunta@gmail.com, Silvestri, M.3 marco.silvestri@dei.unipd.it, Beck, M. J.4,5 beck@engr.uky.edu, Dixit, S. K.6 sriramdixit@gmail.com, Schrimpf, Ronald D.1 ron.schrimpf@vanderbilt.edu, Reed, R. A.1 robert.a.reed@vanderbilt.edu, Fleetwood, D. M.1 dan.fleetwood@vanderbilt.edu, Shen, L.7 lkshen@engineering.ucsb.edu, Mishra, U. K.7 mishra@ece.ucsb.edu
Publikováno v:
IEEE Transactions on Nuclear Science. Dec2009 Part 1 of 2, Vol. 56 Issue 6, p3192-3195. 4p.
Autor:
Kalavagunta, Aditya1 Aditya.n.Kalavagunta@vanderbilt.edu, Schrimpf, Ron1 Ron.Schrimpf@vanderbilt.edu, Neifeld, Mark2 neifeld@ece.arizona.edu
Publikováno v:
IEEE Transactions on Nuclear Science. Dec2004 Part 2 of 3, Vol. 51 Issue 6, p3595-3602. 8p.
Autor:
Kalavagunta, Aditya1 adityak@email.asjzona.edu, Bo Choi, Aditya2, Neifeld, Mark A.1, Schrimpf, Ron2
Publikováno v:
IEEE Transactions on Nuclear Science. Dec2003 Part 1 of 2, Vol. 50 Issue 6, p1982-1990. 9p.