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pro vyhledávání: '"Kalai Selvi Kanagarajan"'
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 15, Iss 1, Pp 713-718 (2024)
In this research paper, a vertical tunnel field-effect transistor (TFET) structure containing a live metal strip and a material with low dielectric constant is designed, and its performance metrics are analyzed in detail. Low-k SiO2 is incorporated i
Externí odkaz:
https://doaj.org/article/7f35bd15b6fa4ce19268b862a8ddd0c8