Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Kaizhou Tan"'
Autor:
Kunfeng Zhu, Peijian Zhang, Zicheng Xu, Tao Wang, Xiaohui Yi, Min Hong, Yonghui Yang, Guangsheng Zhang, Jian Liu, Jianan Wei, Yang Pu, Dong Huang, Ting Luo, Xian Chen, Xinyue Tang, Kaizhou Tan, Wensuo Chen
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 30-35 (2023)
Low frequency (LF) noise is a powerful and non-destructive technique for evaluating the oxide-semiconductor interface and an effective evaluating tool in characterizing electronic device’s structure and reliability. In this study, we present a syst
Externí odkaz:
https://doaj.org/article/94d4e4dddf4447698a346b49f0219f0a
Autor:
Jingjing Jin, Shengdong Hu, Yinhui Chen, Kaizhou Tan, Jun Luo, Feng Zhou, Zongze Chen, Ye Huang
Publikováno v:
Advances in Condensed Matter Physics, Vol 2015 (2015)
In order to achieve a high breakdown voltage (BV) for the SOI (Silicon-On-Insulator) power device in high voltage ICs, a novel high voltage n-channel lateral double-diffused MOS (LDMOS) with a lateral variable interface doping profile (LVID) placed a
Externí odkaz:
https://doaj.org/article/c3cd0b5e11504bef93f5f0c35e158ba4
Publikováno v:
2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0577c15c7ad9a05115dcb8958cd7bb5
https://doi.org/10.1109/icsict55466.2022.9963474
https://doi.org/10.1109/icsict55466.2022.9963474
Autor:
Xue Wu, Wensuo Chen, Yi Zhong, Peijian Zhang, Jian'an Wang, Yonghui Yang, Kaizhou Tan, Han Weimin, Xianchao Wen, Zhou Yu, Zhu Kunfeng, Jing Li
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 19:494-500
Anomalous irradiation response to total ionizing dose effects of 60Co ${\gamma }$ ray in double polysilicon self-aligned (DPSA) bipolar PNP transistors at a low dose rate was observed. It is experimentally revealed that the anomalous current gain ( $
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5da409c93e7b60e77ddc77a308a47ffd
https://doi.org/10.1109/tdmr.2019.2923170
https://doi.org/10.1109/tdmr.2019.2923170
Publikováno v:
Journal of Computational Electronics. 17:1578-1583
The gate oxide layer and parasitic bipolar junction transistor are inherent elements of vertical double-diffused power metal–oxide–semiconductor field-effect transistors (MOSFETs). Single-event gate rupture (SEGR) and single-event burnout (SEB) m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2f09c131c728607b27269c42e67caa0
https://doi.org/10.1007/s10825-018-1224-7
https://doi.org/10.1007/s10825-018-1224-7
Autor:
Wensuo Chen, Zheng Zeng, Kaizhou Tan, Hao Chen, Ruijin Liao, Peijian Zhang, Bo Zhang, Yi Zhong
Publikováno v:
IEEE Electron Device Letters. 38:902-905
In this letter, the electrical characteristics of the Schottky contact super barrier rectifier (SSBR) are explained and verified by simulations and experiments. In addition to an MOS channel operating as a super barrier, there is an indirect Schottky
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acfd5877d6368272c69840e17c275974
https://doi.org/10.1109/led.2017.2703597
https://doi.org/10.1109/led.2017.2703597
Autor:
Peijian Zhang, Zhu Kunfeng, Kaizhou Tan, Xue Wu, Yi Qianning, Yi Zhong, Chen Wensuo, Yonghui Yang
Publikováno v:
Microelectronics Reliability. 71:86-90
We investigate the γ-ray total dose induced degradation of double polysilicon self-aligned (DPSA) bipolar NPN transistors at low dose rate. Through comparing the measured results in low- and high-level injection regions, we find that the main irradi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86da6919d57939176b1ccf0dab866ab5
https://doi.org/10.1016/j.microrel.2017.02.015
https://doi.org/10.1016/j.microrel.2017.02.015
Publikováno v:
IEEE Electron Device Letters. 38:244-247
In this letter, a novel super barrier rectifier with an N-enhancement layer (NEL-SBR) is proposed and experimentally demonstrated. Similar to, yet different from, the anti-JFET implantation technology for planar VDMOS, the NEL design equips this new
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ad259e4aabcba6196bbeae6ee1b42d6
https://doi.org/10.1109/led.2016.2647603
https://doi.org/10.1109/led.2016.2647603
Publikováno v:
2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC).
A novel superjunction-like ultralow Specific On-Resistance (R$_{on,sp}$) structure is proposed based on Resistive Field Plate and RESURF principle. The numerical simulation results show that the structure features R $_{on,sp}$ of $12\mathrm{m} \Omega
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37e3599722557650159182b499a741d5
https://doi.org/10.1109/edssc.2019.8754314
https://doi.org/10.1109/edssc.2019.8754314
Publikováno v:
2018 International Conference on Radiation Effects of Electronic Devices (ICREED).
This paper analyses the failure mechanism and striking process of heavy ions irradiated vertical double diffusion power metal-oxide-semiconductor field effect transistor(VDMOS), concludes three irradiation hardening technologies, shielding technology
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5fdb6944e3f727afa6aa4f14dcb9ce2
https://doi.org/10.1109/icreed.2018.8905059
https://doi.org/10.1109/icreed.2018.8905059