Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Kaizhe Guo"'
Publikováno v:
IEEE Transactions on Circuits and Systems I: Regular Papers. 69:2284-2296
Autor:
Kaizhe Guo, Patrick Reynaert
Publikováno v:
IEEE Transactions on Circuits and Systems I: Regular Papers. 69:2311-2324
Autor:
Kaizhe Guo, Patrick Reynaert
Publikováno v:
IEEE Transactions on Terahertz Science and Technology. 12:245-256
Publikováno v:
IEEE Journal of Solid-State Circuits. 56:3827-3839
This article presents a 420-GHz phase imaging system designed in a 40-nm CMOS technology. It consists of a transmitter (TX), based on a multiplier chain, and a receiver (RX), based on a two-step IQ down-conversion. Those chips share an external, 17.5
Publikováno v:
IEEE Journal of Solid-State Circuits. 54:380-391
This paper presents a 0.53-THz subharmonic injection-locked $1\times 4$ phased array based on an injection-locked oscillator (ILO) chain. Thanks to the ILO chain, the phase errors in the phased array can be compensated without introducing power varia
Publikováno v:
ISSCC
The small wavelength and non-ionizing nature of EM waves in the THz spectrum make this frequency band attractive for high-resolution imaging applications. While amplitude-based THz imaging systems have already been demonstrated in Silicon [1], an int
Publikováno v:
2020 Third International Workshop on Mobile Terahertz Systems (IWMTS).
In this paper, two CMOS arrays above 0.5 THz are introduced. By coupling numerous radiator elements together, state-of-the-art radiated power is achieved. At 0.59 $T$ Hz, a coherent radiator array is designed in 40 nm CMOS. Combining 36 coherent radi
Autor:
Patrick Reynaert, Kaizhe Guo
Publikováno v:
ISSCC
In THz imaging systems, signal sources are needed to provide illumination of objects. In several reported imaging systems working at 0.3THz, 0.62THz, and 0.81 THz, an output power around 1 mW is required to achieve an acceptable dynamic range [1]. In
© 2018 IEEE. This paper presents the design, implementation, and measurement of a 0.53-THz radiating source in a 28-nm bulk CMOS technology. An oscillator-tripler topology is employed to effectively generate and extract the third harmonic at 0.53 TH
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b528f7bdbaed327254689a127a7cece1
https://lirias.kuleuven.be/handle/123456789/623841
https://lirias.kuleuven.be/handle/123456789/623841
© 2018 IEEE. CMOS transistors have become nanometer devices and operating frequencies (fmax) of transistors keep increasing with each technology node. Today, in 28 nm and 40 nm CMOS, sub-THz circuits can be implemented in standard CMOS. By using non
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::948db0312ef0e8f4e8f8697c5a167513
https://lirias.kuleuven.be/handle/123456789/631402
https://lirias.kuleuven.be/handle/123456789/631402