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pro vyhledávání: '"Kaivan Karami"'
Autor:
Kaivan Karami, Aniket Dhongde, Huihua Cheng, Paul M. Reynolds, Bojja Aditya Reddy, Daniel Ritter, Chong Li, Edward Wasige, Stephen Thoms
Publikováno v:
Micro and Nano Engineering, Vol 19, Iss , Pp 100211- (2023)
We demonstrate the fabrication of sub-100 nm T-Gate structures using a single electron beam lithography exposure and a tri-layer resist stack - PMMA/LOR/CSAR. Recent developments in modelling resist development were used to design the process, in whi
Externí odkaz:
https://doaj.org/article/9424c6c05d4d4cf3a1c11b16f2c9bbf6
