Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Kaiheng Ye"'
Autor:
Feima Wu, Guosheng Xu, Guangchao Li, Zhao Yin, Huijuan Shen, Kaiheng Ye, Yangmin Zhu, Qing Zhang, Ruiming Ou, Shuang Liu
Publikováno v:
Frontiers in Molecular Biosciences, Vol 10 (2023)
Background: Acute myeloid leukemia (AML) is a heterogeneous disorder with an unpredictable prognosis. Ferroptosis, the iron-dependent cell death program, could serve as an alternative for overcoming drug resistance. However, its effect on AML remains
Externí odkaz:
https://doaj.org/article/e0ec34bd8c124d95b30dbef622760b4b
Autor:
Daniel Widmann, Jörg Schulze, M. Schmid, Erich Kasper, Roman Körner, Michael Oehme, Wogong Zhang, Martin Gollhofer, Kaiheng Ye, Konrad Kostecki
Publikováno v:
Solid-State Electronics. 110:71-75
In this paper the optical absorption of the GeSn PIN photodetector was investigated. The vertical GeSn PIN photodetectors were fabricated by molecular beam epitaxy (MBE) and dry etching. By means of current density–voltage (J–V) and capacity–vo
Autor:
Martin Kittler, Michael Oehme, Erich Kasper, Tzanimir Arguirov, Gregor Mussler, Martin Gollhofer, Dan Buca, Roman Körner, Konrad Kostecki, M. Schmid, Jörg Schulze, Mathias Kaschel, Kaiheng Ye
Publikováno v:
IEEE Photonics Technology Letters. 26:187-189
GeSn on Si light-emitting diodes (LEDs) is investigated for different Sn concentrations up to 4.2% and they are compared with an LED made from pure Ge on Si. The LEDs are realized from in-situ doped pin junctions in GeSn on Ge virtual substrates. The
Autor:
Jörg Schulze, Martin Gollhofer, Erich Kasper, Konrad Kostecki, Stefan Bechler, Kaiheng Ye, M. Schmid, Roman Körner, Mathias Kaschel, Michael Oehme, Kai Ulbricht, Wogong Zhang
Publikováno v:
11th International Conference on Group IV Photonics (GFP).
Vertical GeSn pin photodiodes with Sn content of 0 %, 2 % and 4.2 %, resp., grown with molecular beam epitaxy on thin Ge virtual substrates on Si are investigated by using the electrical and optoelectrical methods: direct current, light responsivity
Autor:
Oehme, Michael, Kostecki, Konrad, Arguirov, Tzanimir, Mussler, Gregor, Kaiheng Ye, Gollhofer, Martin, Schmid, Marc, Kaschel, Mathias, Korner, Roman Alexander, Kittler, Martin, Buca, Dan, Kasper, Erich, Schulze, Jorg
Publikováno v:
IEEE Photonics Technology Letters; Jan2014, Vol. 26 Issue 2, p187-189, 3p
Autor:
Martin Gollhofer, M. Schmid, Daniel Widmann, Jörg Schulze, Kaiheng Ye, Wogong Zhang, Michael Oehme, Erich Kasper, Konrad Kostecki
Publikováno v:
Web of Science
Germanium tin (GeSn) shifts the photo-response of infrared (IR) light detectors from a typical cutoff wavelength of Ge detectors of 1550nm toward the mid infrared (MIR) [1]. The determination of the optical absorption coefficient of GeSn is difficult
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8f932cf4eafb0ecbcf5e4e856ed525f8
https://publons.com/wos-op/publon/54097353/
https://publons.com/wos-op/publon/54097353/
Autor:
Kai Ulbricht, Wogong Zhang, Micheal Oehme, Stefan Bechler, Erich Kasper, Jörg Schulze, Kaiheng Ye
Publikováno v:
Web of Science
This study presents calibration of a self-built 40 GHz measurement setup using vector network analyzer and Mach-Zehnder modulator. The setup is used for frequency response characterization of Ge PIN photodetectors.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7f0a92daded21ef6462ccbe68f295736
https://publons.com/wos-op/publon/54097363/
https://publons.com/wos-op/publon/54097363/