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pro vyhledávání: '"Kai-Ting Tseng"'
Autor:
Kai-Ting Tseng, 曾楷婷
102
The present study aimed to explore whether the Premotor Cortex (PMC, includes BA 6 & BA 44) was a critical area to distinguish between ‘grasping objects with hands’ and ‘with tools’. The study hypothesized that there was a TMS effect
The present study aimed to explore whether the Premotor Cortex (PMC, includes BA 6 & BA 44) was a critical area to distinguish between ‘grasping objects with hands’ and ‘with tools’. The study hypothesized that there was a TMS effect
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/93s48a
Publikováno v:
2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Foundry FAB manufactures a variety of semiconductor products with adverse mixture of process flows. For process control, it is a challenge to define some critical dimension measurement items target of each unique product characteristic before new tap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::728448a5f244194b014cdee3aebd5e5d
https://doi.org/10.1109/asmc.2019.8791783
https://doi.org/10.1109/asmc.2019.8791783
Autor:
Ming-Huan Tsai, Yu-Lien Huang, Li-Te Lin, Wang Shiang-Bau, Hung-Ming Chen, Eric Ou-Yang, Yuh-Jier Mii, Hsien-Hsin Lin, Hun-Jan Tao, Chia-Cheng Ho, Chen-Ping Chen, Jhon-Jhy Liaw, Jyh-Cherng Sheu, Feng Yuan, Chu-Yun Fu, Yi-Hsuan Liu, Li-Shiun Chen, Chia-Feng Hu, Chen-Nan Yeh, Shih-Peng Tai, Ming-Jie Huang, Chih-Sheng Chang, C.H. Chang, Shu-Tine Yang, Jeff J. Xu, Tsung-Lin Lee, Li-Shyue Lai, Shao-Ming Yu, Clement Hsingjen Wann, Kai-Ting Tseng, Leo Chen, Chih-Chieh Yeh, Ming-Feng Shieh, Chien-Chang Su, Jeng-Jung Shen, Shyue-Shyh Lin, Shih-Ting Hung, Hsien-Chin Lin, Shin-Chih Chen, Kin-Weng Wang, Yuan-Hung Chiu, Tsz-Mei Kwok, Fu-Kai Yang
Publikováno v:
2009 IEEE International Electron Devices Meeting (IEDM).
FinFET is the most promising double-gate transistor architecture [1] to extend scaling over planar device. We present a high-performance and low-power FinFET module at 25 nm gate length. When normalized to the actual fin perimeter, N-FinFET and P-Fin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::144d7411e1ccabb3bfe552132a866a0f
https://doi.org/10.1109/iedm.2009.5424367
https://doi.org/10.1109/iedm.2009.5424367