Zobrazeno 1 - 10
of 76
pro vyhledávání: '"Kai-Tak Lam"'
Autor:
Zichen Zhang, Matthias Passlack, Gregory Pitner, Cheng-Hsuan Kuo, Scott T. Ueda, James Huang, Harshil Kashyap, Victor Wang, Jacob Spiegelman, Kai-Tak Lam, Yu-Chia Liang, San Lin Liew, Chen-Feng Hsu, Andrew C. Kummel, Prabhakar Bandaru
Publikováno v:
ACS Applied Materials & Interfaces. 14:11873-11882
A new generation of compact and high-speed electronic devices, based on carbon, would be enabled through the development of robust gate oxides with sub-nanometer effective oxide thickness (EOT) on carbon nanotubes or graphene nanoribbons. However, to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::93eeb9d846fad5e08cc0dcce4eb0a052
https://doi.org/10.1021/acsami.1c21743
https://doi.org/10.1021/acsami.1c21743
Autor:
Justin Z. Wu, Alexander L. Antaris, Fan Yang, Xinyue Li, Kai-Tak Lam, Jian-Min Zuo, Jing Guo, Changxin Chen, Meng-Chang Lin, Zhuoyang He, Wenpei Gao, Guosong Hong, Jie Liu, Wu Zhou, Ming Gong, Fangyuan Shi, Hongjie Dai, Jian Nong Wang, Qiaoshi Zeng, Wendy L. Mao, Yu Lin
Publikováno v:
Nature Electronics. 4:653-663
Graphene nanoribbons are of potential use in the development of electronic and optoelectronic devices. However, the preparation of narrow and long nanoribbons with smooth edges, sizeable bandgaps and high mobilities is challenging. Here we show that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ebbec340096de6147de804d2cf40e7f
https://doi.org/10.1038/s41928-021-00633-6
https://doi.org/10.1038/s41928-021-00633-6
Publikováno v:
ACM Journal on Emerging Technologies in Computing Systems. 13:1-28
Monolayer heterojunction FETs based on vertical heterogeneous transition metal dichalcogenides (TMDCFETs) and planar black phosphorus FETs (BPFETs) have demonstrated excellent subthreshold swing, high I ON I OFF , and high scalability, making them at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30935d9e837676ce19823923932d0d86
https://doi.org/10.1145/2967613
https://doi.org/10.1145/2967613
Autor:
Sheng Luo, Arun Bansil, Hsin Lin, Kai-Tak Lam, Wen Huang, Gengchiau Liang, Chuang-Han Hsu, Baokai Wang, Liang-Zi Yao
Publikováno v:
IEEE Transactions on Electron Devices. 64:579-586
Black phosphorus (BP) has been proposed as the channel material in the next generation ultrascaled CMOS devices. In order to gain insight into the current characteristics in 2-D layered materials, the current distribution of a few-layer BP Schottky b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d322d033db717e06e6b69ae5f7760fa1
https://doi.org/10.1109/ted.2016.2635690
https://doi.org/10.1109/ted.2016.2635690
Publikováno v:
IEEE Transactions on Electron Devices. 64:58-65
An improved simulation scheme for investigating the performance of nanoscale FETs is developed in this paper. The total current of the MOSFET consists of two main components: thermionic current above the top of barrier of the channel calculated by ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81001ed0a1070af62046173c2545fb1b
https://doi.org/10.1109/ted.2016.2632310
https://doi.org/10.1109/ted.2016.2632310
Autor:
Kai-Tak Lam, Jing Guo
Publikováno v:
Journal of Applied Physics; 2015, Vol. 117 Issue 11, p113105-1-113105-4, 4p, 1 Diagram, 3 Graphs
Publikováno v:
IEEE Transactions on Electron Devices. 62:788-794
We investigated the effect of body thickness on the electrical performance of GaSb double-gate ultrathin-body (DG-UTB) MOSFET by examining the band structure of the 12- ( $\sim 2$ nm), 24- ( $\sim 4$ nm), 36- ( $\sim 6$ nm), and 48- ( $\sim 8$ nm) at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b57af890e16a0326ebe2bc165154f56
https://doi.org/10.1109/ted.2014.2387194
https://doi.org/10.1109/ted.2014.2387194
Autor:
Kai-Tak Lam, Gengchiau Liang, Kazu Suenaga, Lain-Jong Li, Jr-Hau He, Ming-Yang Li, Yung-Chang Lin, Lih-Juann Chen, Meng-Lin Tsai, José Ramón Durán Retamal
Publikováno v:
Advanced Materials. 29
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5d3637415ca7f6ebc70b952430428b5
https://doi.org/10.1002/adma.201770230
https://doi.org/10.1002/adma.201770230
Autor:
José Ramón Durán Retamal, Kai-Tak Lam, Gengchiau Liang, Lain-Jong Li, Jr-Hau He, Lih-Juann Chen, Ming-Yang Li, Yung-Chang Lin, Kazu Suenaga, Meng-Lin Tsai
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 29(32)
The recent development of 2D monolayer lateral semiconductor has created new paradigm to develop p-n heterojunctions. Albeit, the growth methods of these heterostructures typically result in alloy structures at the interface, limiting the development
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bd078f17683fb5c3124516c9626e80e8
https://pubmed.ncbi.nlm.nih.gov/28650580
https://pubmed.ncbi.nlm.nih.gov/28650580
Influence of contact doping on graphene nanoribbon heterojunction tunneling field effect transistors
Publikováno v:
Solid-State Electronics. 77:51-55
We investigated the device performance of graphene nanoribbon tunneling field-effect transistors with heterogeneous channel as a function of the contact doping concentrations. The simulations were carried out based on the non-equilibrium Green’s fu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3bc5fa12830bb31c6941382ea706d98
https://doi.org/10.1016/j.sse.2012.05.023
https://doi.org/10.1016/j.sse.2012.05.023