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pro vyhledávání: '"Kai-Syang Hsu"'
Autor:
Pu-Jia Hsieh, Jiun-Yun Li, Chi-Te Liang, Hung-Yu Tsao, Chih-Ying Chiang, Kai-Syang Hsu, Min-Jui Lin, Ching-Chen Yeh, Yu-Jui Wu, Jeng-Chung Chen, Wei-Ren Syong
Publikováno v:
2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
In this work, we present measurements of Si n-MOSFETs at temperatures ranging from 1.5 K to 300 K to and Coulomb blockade in a gate-defined Si MOS quantum dot (QD). Current-voltage (I-V) characteristics of Si n-MOSFETs are presented with a decreasing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::346088615d6411ed4691de3b51a97b49
https://doi.org/10.1109/vlsi-tsa51926.2021.9440109
https://doi.org/10.1109/vlsi-tsa51926.2021.9440109
