Zobrazeno 1 - 10
of 56
pro vyhledávání: '"Kai-Lun Chi"'
Autor:
Juri Vinogradov, Roman Kruglov, Rainer Engelbrecht, Olaf Ziemann, Jinn-Kong Sheu, Kai-Lun Chi, Jhih-Min Wun, Jin-Wei Shi
Publikováno v:
IEEE Photonics Journal, Vol 9, Iss 3, Pp 1-7 (2017)
We demonstrate the performance of a novel cyan light-emitting diode (LED) on a patterned sapphire substrate for use as a light source for plastic optical fiber (POF) communications with the central wavelength at 500 nm. By significantly reducing the
Externí odkaz:
https://doaj.org/article/2007663177184031a1e9177406181e0c
Autor:
Kai-Lun Chi, Jin-Wei Shi, C. H. Jang, Pyry Kivisaari, Jani Oksanen, Jukka Tulkki, M. L. Lee, J. K. Sheu
Publikováno v:
IEEE Photonics Journal, Vol 4, Iss 5, Pp 1870-1880 (2012)
Distinct temperature-dependent dynamic behaviors of GaN-based blue light-emitting diodes (LEDs) are observed by use of the very-fast electrical-optical pump-probe technique. Our static and impulse response measurement results indicate that the behavi
Externí odkaz:
https://doaj.org/article/c01fa1bf167e44028b0f794f20fd229d
Autor:
Kung-Hsuan Lin, Dzung-Han Tsai, Kuan-Jen Wang, Sheng-Hui Chen, Kai-Lun Chi, Jin-Wei Shi, Po-Cheng Chen, Jinn-Kong Sheu
Publikováno v:
AIP Advances, Vol 3, Iss 7, Pp 072126-072126 (2013)
Due to the high attenuation in vitreous silica, acoustic attenuations in the THz regime are typically measured by incoherent techniques such as Raman, neutron, and X-ray scattering. Here, we utilized multiple-quantum-well structures to demonstrate ac
Externí odkaz:
https://doaj.org/article/62c3b8c463c64bc298854c5cfc8bb69a
Publikováno v:
IEEE Photonics Journal, Vol 5, Iss 6, Pp 1502508-1502508 (2013)
We demonstrate novel structures of an 850-nm vertical-cavity surface-emitting laser (VCSEL) array for high output power, single-lobe far-field pattern, and narrow divergence angle. By using the Zn-diffusion process with proper sizes of oxide-current-
Externí odkaz:
https://doaj.org/article/51971f1e28d740148ad26e54a6b12eba
Autor:
Kai-Lun Chi, 紀凱倫
106
In today's optical communications (OI) market, vertical-cavity surface-emitting lasers (VCSELs) with central wavelengths at 850 nm have mainly been used as the primary signal emitters for short distances
In today's optical communications (OI) market, vertical-cavity surface-emitting lasers (VCSELs) with central wavelengths at 850 nm have mainly been used as the primary signal emitters for short distances
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/p72747
Publikováno v:
Journal of Lightwave Technology. 37:1225-1230
The speed performance of a high lumen and high color rendering index (CRI) gallium nitride-based white-light light-emitting diode (LED) has been investigated in detail by measuring its electrical-to-optical frequency responses with different color fi
Publikováno v:
IEEE Journal of Quantum Electronics. 54:1-6
In this paper, we demonstrate a novel structure for 850- and 940-nm wavelength high-speed vertical-cavity surface-emitting lasers (VCSELs). Extra shallow apertures (~20 nm) are etched on the topmost current spreading (CS) layer of 850- or 940-nm VCSE
Publikováno v:
Journal of Lightwave Technology. 35:3242-3249
The functionality of novel parallel and series high-speed vertical-cavity surface-emitting laser (VCSEL) arrays, which can greatly relax the tradeoff between output power and modulation speed, is demonstrated. Both types of array structure allow impr
Autor:
Jason Jyehong Chen, Xin-Nan Chen, Jia-Liang Yen, Jin-Wei Shi, Kai-Lun Chi, Dan-Hua Hsieh, Ying-Jay Yang, Hao-Chung Kuo
Publikováno v:
IEEE Journal of Quantum Electronics. 52:1-7
In this paper, we study the influence of p-type modulation doping on the dynamic/static performance of high-speed 850-nm VCSELs with highly strained multiple quantum wells. The studied device structure has a 3/ $2~\lambda $ asymmetric cavity design,
Autor:
Jin-Wei Shi, Kai-Lun Chi, N. N. Ledentsov, J.-R. Kropp, Xin-Nan Chen, Jason Jyehong Chen, M. Agustin, Nikolay Ledentsov, Yi-Xuan Shi, Grzegorz Stepniak, Ying-Jay Yang, Jaroslaw P. Turkiewicz
Publikováno v:
IEEE Photonics Technology Letters. 28:1367-1370
By combing Zn-diffusion and oxide-relief apertures with strong detuning (>20 nm) in our demonstrated short-cavity ( $\lambda $ /2) 850-nm vertical-cavity surface-emitting lasers (VCSELs), wide electrical-to-optical bandwidth (29–24 GHz), low-differ