Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Kai-Jun Cao"'
Autor:
Chun-Yan Wu, Kai-Jun Cao, Yu-Xuan Le, Jing-Yue Li, Chen-Yue Zhu, Li Wang, Yu-Xue Zhou, Di Wu, Lin-Bao Luo
Publikováno v:
The Journal of Physical Chemistry Letters. 13:2668-2673
In this work, we report on the synthesis of InSe nanobelts through a catalyst-free chemical vapor deposition (CVD) growth approach. A remarkable blue shift of the peak photoresponse was observed when the thickness of the InSe nanobelt decreases from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::779e751e2b8506f516f47f16e9978179
https://doi.org/10.1021/acs.jpclett.2c00518
https://doi.org/10.1021/acs.jpclett.2c00518
Autor:
Chao Xie, Lin-Bao Luo, Kang Jingwei, Chao Zhang, Di Wu, Chunyan Wu, Kai-Jun Cao, Shi-Rong Chen, Yu Lu
Publikováno v:
Journal of Materials Chemistry C. 8:13762-13769
In this work, we present the assembly of a γ-In2Se3/GaAs heterostructure-based photodetector linear array composed of 1 × 10 device units. The layered γ-In2Se3 films with a well-defined pattern are deposited directly onto a planar GaAs substrate v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20d09f3126e8557d9e9957eb70026b33
https://doi.org/10.1039/d0tc03872e
https://doi.org/10.1039/d0tc03872e
Autor:
Zhen Yu Liao, Kai Jun Cao, Cheng Long Wang, Wen Jie Liu, Li Tu, Ye Mei Han, Wen Qi, Tiao Hao He, Chuan Lai Zang, Zhengchun Yang
Publikováno v:
Materials Science Forum. 944:721-728
Graphene quantum dots (GQDs), with stable photoluminescence (PL) and electrocatalytic activity, have potential application in sensor field. Herein, a facile novel electrochemiluminescence (ECL) sensor based on GQDs and glassy carbon electrode (GCE) w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0daa72c3a7eceb2e3fabcbeefbadc03e
https://doi.org/10.4028/www.scientific.net/msf.944.721
https://doi.org/10.4028/www.scientific.net/msf.944.721
Publikováno v:
Journal of Materials Chemistry C.
A γ-In2Se3/Si heterostructure phototransistor with a broadened photoresponse has been developed, presenting a responsivity, specific detectivity and response speed of 10.24 A W−1, 8.63 × 1012 Jones and 0.76/0.85 ms (rise time/fall time) at 450 nm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f120cabf40c8c2512f05a108dcb19e00
https://doi.org/10.1039/d1tc01837j
https://doi.org/10.1039/d1tc01837j