Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Kai-Hung Yu"'
Publikováno v:
The International Journal of Advanced Manufacturing Technology. 121:8209-8220
In this study, the clamping stress and force involved in the centering of optical glass lens were evaluated and quantified. On the basis of the key design parameters of the examined clamps, the finite element method was applied to measure clamping st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3b5de1c983a3806bdc0c341fca1a6add
https://doi.org/10.1007/s00170-022-09915-5
https://doi.org/10.1007/s00170-022-09915-5
Publikováno v:
The International Journal of Advanced Manufacturing Technology. 119:6321-6334
A method was proposed for analyzing the optical glass lens centering process, and experiments on biplane quartz lenses were performed to determine the material removal rate (MRR) for the hard, brittle material. This study used acoustic emission–sen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b4225eac722053f56fcd239b75534d03
https://doi.org/10.1007/s00170-021-08385-5
https://doi.org/10.1007/s00170-021-08385-5
Autor:
Qiaowei Lou, Katie Lutker-Lee, Eric Liu, Gregory Denbeaux, Angelique Raley, Kai-hung Yu, Peter Biolsi, Ya-Ming Chen
Publikováno v:
Journal of Micro/Nanopatterning, Materials, and Metrology. 20
Extreme ultraviolet lithography (EUVL) has been adopted into high volume production for advanced logic device manufacturing. Due to the continuous size scaling requirement for interconnect fabrication, EUVL with self-aligned double patterning (SADP)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3757fb19f61ffe819d7ff479889b8d15
https://doi.org/10.1117/1.jmm.20.2.024901
https://doi.org/10.1117/1.jmm.20.2.024901
Publikováno v:
2020 IEEE International Interconnect Technology Conference (IITC).
Ru capping process was demonstrated on 48nm-pitch Cu damascene interconnect with area selective deposition technique of Ru CVD. Ru nucleation and film continuity were optimized by process including wet cleaning and dry surface treatments. Physical an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6245b4d156b683ce10e73bba6f51b8f
https://doi.org/10.1109/iitc47697.2020.9515666
https://doi.org/10.1109/iitc47697.2020.9515666
Publikováno v:
ECS Meeting Abstracts. :1004-1004
Historically, complementary metal-oxide-semiconductor (CMOS) technology was driven by geometrical scaling of the front-end-of-line (FEOL) transistor but it has slowed down significantly in recent years. On the other hand, back-end-of-line (BEOL) inte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3afa80bdcd1d258cfa46d94c8e9e8a10
https://doi.org/10.1149/ma2021-01301004mtgabs
https://doi.org/10.1149/ma2021-01301004mtgabs
Autor:
Alain C. Diebold, Gert J. Leusink, Sonal Dey, Robert D. Clark, Steven Consiglio, Kandabara Tapily, Kai-Hung Yu, Cory Wajda, Arthur R. Woll
Publikováno v:
MRS Advances. 1:269-274
For exploring the prospect of higher-k dielectric phase engineering on a high mobility substrate, films of Hf1-xZrxO2 with varying x-values (0 ≤ x ≤ 1) were deposited on Al2O3 passivated Ge substrates using atomic layer deposition (ALD) with a cy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b126de7d5822bf7ae318e7bb354a9f0f
https://doi.org/10.1557/adv.2016.65
https://doi.org/10.1557/adv.2016.65
Autor:
David L. O'Meara, K. Tapily, Jeffrey S. Smith, Cory Wajda, Steven Consiglio, Robert D. Clark, Kai-Hung Yu, Takahiro Hakamata, Gert J. Leusink
Publikováno v:
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM).
In this paper we present an overview and examples of thin films processing technologies for future generations of leading edge semiconductor devices. We introduce the main driving forces affecting future thin film deposition and etch technologies inc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30333270c6ebae17802c90ab87f0b17a
https://doi.org/10.1109/edtm.2018.8421524
https://doi.org/10.1109/edtm.2018.8421524
Autor:
Tyler Barbera, Gert J. Leusink, Gyanaranjan Pattanaik, Fred Wafula, Larry Smith, Brian Sapp, Victor Vartanian, Toshio Hasegawa, Steve Golovato, Alison Gracias, Kaoru Maekawa, Shan Hu, Steve Olson, Jack Enloe, Kai-Hung Yu, Klaus Hummler
Publikováno v:
International Symposium on Microelectronics. 2014:000001-000007
SEMATECH evaluated the impact of various process options on the overall manufacturing cost of a TSV module, from TSV lithography and etch through post-plate CMP. The purpose of this work was to understand the cost differences of these options in orde
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d12e43b9cb85bf97de970ea10e38478f
https://doi.org/10.4071/isom-ta11
https://doi.org/10.4071/isom-ta11
Autor:
Tyler Barbera, Klaus Hummler, Gyanaranjan Pattanaik, Larry Smith, Gert J. Leusink, Steve Olson, Brian Sapp, Kai-Hung Yu, Shan Hu, Akira Fujita, Alison Gracias, Jack Enloe, Kaoru Maekawa, Kenneth Matthews, Victor Vartanian, Fred Wafula
Publikováno v:
International Symposium on Microelectronics. 2014:000794-000803
Even as unit processes for high aspect ratio (HAR) through silicon via (TSV) mid-wafer front-side processing are becoming relatively mature, scaling of the TSVs and reduction of cost of ownership (COO) drive significant innovations in processes, equi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::847d8b085afbcb5aa5f4947b13ff4eac
https://doi.org/10.4071/isom-thp14
https://doi.org/10.4071/isom-thp14
Autor:
Kikuchi Yuki, Hiroaki Kawasaki, Steven Consiglio, Manabu Oie, Kaoru Maekawa, Hiroyuki Nagai, Gert J. Leusink, Cory Wajda, Kai-Hung Yu
Publikováno v:
2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC).
We have integrated ALD barrier and Ru liner for novel interconnect integration and have evaluated electrical properties and time dependent dielectric breakdown (TDDB). RC and via resistance were reduced by the ALD barrier, and particularly it was con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba132ee8378f7c062676180812540ad6
https://doi.org/10.1109/iitc-amc.2016.7507696
https://doi.org/10.1109/iitc-amc.2016.7507696