Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Kai-Hsin Wen"'
Autor:
Gao Zhan, Fabiana Rampazzo, Carlo De Santi, Mirko Fornasier, Gaudenzio Meneghesso, Matteo Meneghini, Hervé Blanck, Jan Grünenpütt, Daniel Sommer, Ding Yuan Chen, Kai-Hsin Wen, Jr-Tai Chen, Enrico Zanoni
Publikováno v:
IEEE Transactions on Electron Devices. 70:3005-3010
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4162cb889aa56efb52b179f28dd1d1a
https://doi.org/10.1109/ted.2023.3270134
https://doi.org/10.1109/ted.2023.3270134
Autor:
Ding-Yuan Chen, Axel R Persson, Kai-Hsin Wen, Daniel Sommer, Jan Grünenpütt, Hervé Blanck, Mattias Thorsell, Olof Kordina, Vanya Darakchieva, Per O Å Persson, Jr-Tai Chen, Niklas Rorsman
Publikováno v:
Semiconductor Science and Technology. 37:035011
The impact on the performance of GaN high electron mobility transistors (HEMTs) of in situ ammonia (NH3) pre-treatment prior to the deposition of silicon nitride (SiN) passivation with low-pressure chemical vapor deposition (LPCVD ) is investigated.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a022fad3b966822df27fd0a03c03742
https://doi.org/10.1088/1361-6641/ac4b17
https://doi.org/10.1088/1361-6641/ac4b17
Publikováno v:
RSC Advances. 8:40595-40595
Correction for ‘A thermal-induced electric current from a gold electrode/porous silicon device’ by Cheng-Yin Huang et al., RSC Adv., 2017, 7, 38677–38681.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddd920122865ec9a339f972b1c206712
https://doi.org/10.1039/c8ra90086h
https://doi.org/10.1039/c8ra90086h