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pro vyhledávání: '"Kai-Hsang Chen"'
Autor:
Kai-Hsang Chen, Kuan-Chang Chang, Ting-Chang Chang, Hao Wang, Yong-En Syu, Jung-Hui Chen, Yao-Feng Chang, Simon M. Sze, Hsing-Hua Wu, Jian-Yu Chen, Min-Chen Chen, Geng-Wei Chang, Ya-Hsiang Tai, Cong Ye, Jhih-Hong Pan, Tai-Fa Young, Tsung-Ming Tsai, J. C. Lou, Tian-Jian Chu
Publikováno v:
IEEE Electron Device Letters. 34:502-504
In this letter, we presented that the charge quantity is the critical factor for forming process. Forming is a pivotal process in resistance random access memory to activate the resistance switching behavior. However, overforming would lead to device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7c04065fb867c19d607fe43a674c909
https://doi.org/10.1109/led.2013.2242843
https://doi.org/10.1109/led.2013.2242843
