Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Kai Shiang Tsai"'
Autor:
Chia Wei Hsu, Jone F. Chen, Yi-Wen Chen, San Lein Wu, Shih Chang Tsai, Po Chin Huang, Tsung Hsien Kao, Yean-Kuen Fang, Osbert Cheng, Chien-Ming Lai, Kai-Shiang Tsai
Publikováno v:
IEEE Transactions on Electron Devices. 62:988-993
The random telegraph noise (RTN) characteristics of high- $k$ (HK)/metal gate (MG) pMOSFETs with uniaxial compressive strain have been investigated. The configuration-coordinate diagram and band diagram are both established by extracting trap paramet
Autor:
Hsin-Chieh Yu, Ming Yueh Chuang, Yan-Kuin Su, Kai Shiang Tsai, Chien Sheng Huang, Yu Chun Huang, San Lein Wu, Chih Hung Hsiao, Tsung Hsien Kao
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 20:118-124
The laterally bridged ZnO microrods grown from an Au electrode applied to metal-semiconductor-metal photodetector was fabricated. Interlaced ZnO microrods with approximate single-crystalline structure can be grown from Au electrode fingers. The dark-
Autor:
Chung-Wei Liu, Shoou-Jinn Chang, San-Lein Wu, Chih-Hung Hsiao, Sheng-Joue Young, Bo-Chin Wang, Kuang Yao Lo, Kai-Shiang Tsai, Tsung-Hsien Kao
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 20:89-95
The growth of vertically aligned cobalt-doped ZnO (Co–ZnO) nanorods on a glass substrate using a low-temperature hydrothermal method is reported. A Co–ZnO nanorod metal–semiconductor–metal ultraviolet photodetector (PD) was also fabricated. T
Autor:
Kai-Shiang Tsai, Yi-Hsing Liu, San-Lein Wu, Chih-Hung Hsiao, Shoou-Jinn Chang, Bo-Chin Wang, Tsung-Hsien Kao, Sheng-Joue Young
Publikováno v:
IEEE Transactions on Nanotechnology. 13:238-244
This study presents the fabrication of ZnO nanosheets on a glass substrate using a room-temperature (approximately 25 °C) solution method. The average length and diameter of the ZnO nanosheets were 1.2 μm and approximately 5 nm, respectively. The u
Autor:
Bi-Gui Duan, Kai-Shiang Tsai, Bo-Chin Wang, Tsung-Hsien Kao, Chih-Hung Hsiao, Shoou-Jinn Chang, San-Lein Wu, Sheng-Joue Young
Publikováno v:
IEEE Photonics Technology Letters. 25:2043-2046
We report the growth of vertically aligned indium-doped ZnO (IZO) nanorods on a glass substrate using a low-temperature hydrothermal method. An IZO nanorod metal-semiconductor-metal (MSM) ultraviolet (UV) photodetector (PD) was also fabricated. It wa
Autor:
San-Lein Wu, Shoou-Jinn Chang, Kai-Shiang Tsai, Kuang Yao Lo, Chih-Hung Hsiao, Sheng-Joue Young, Tsung-Hsien Kao, Chung-Wei Liu
Publikováno v:
IEEE Photonics Technology Letters. 25:2089-2092
This letter reports the development of Fe-doped ZnO (FZO) nanorods via a low-temperature hydrothermal method and the fabrication of FZO nanorod metal-semiconductor-metal (MSM) photodetector (PD). The average length and diameter of the FZO nanorods we
Autor:
Ester Yen, Kai-Shiang Tsai
Publikováno v:
Expert Systems with Applications. 35:301-306
We propose a new algorithm based on Harr discrete wavelet transform for the grayscale watermark. Digital watermark is a very popular research for copyright protection of electronic documents and media. With quick developing of information technology,
Autor:
Kai-Shiang Tsai, 蔡凱翔
102
In this work, introduction of a SiGe material into source/drain (S/D) regions provides uniaxial compressive strain on low frequency noise (LFN) in high-k/metal gate (HK/MG) p-channel metal-oxide-semiconductor field-effect transistors (pMOSFE
In this work, introduction of a SiGe material into source/drain (S/D) regions provides uniaxial compressive strain on low frequency noise (LFN) in high-k/metal gate (HK/MG) p-channel metal-oxide-semiconductor field-effect transistors (pMOSFE
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/94482419693221028385
Autor:
Cheng Guo Chen, Bo Chin Wang, Yean-Kuen Fang, Jone F. Chen, Kun Yuan Lo, Po Chin Huang, Chih-Wei Yang, Kai Shiang Tsai, Tsung Hsien Kao, Osbert Cheng, San Lein Wu, Shih Chang Tsai
Publikováno v:
Journal of Nanomaterials, Vol 2014 (2014)
We have studied the low-frequency noise characterizations in 28-nm high-k (HK) pMOSFET with embedded SiGe source/drain (S/D) through1/f noise and random telegraph noise measurements simultaneously. It is found that uniaxial compressive strain really
Autor:
Kai-Shiang Tsai, 蔡凱翔
95
We propose a new algorithm of watermark for grayscale images in this paper. For this purpose, We obtain the main feature of the watermark via Haar Discrete Wavelet Transform (HDWT) and consider the secondary characteristic of the original ima
We propose a new algorithm of watermark for grayscale images in this paper. For this purpose, We obtain the main feature of the watermark via Haar Discrete Wavelet Transform (HDWT) and consider the secondary characteristic of the original ima
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/25847458866908396598