Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Kai Shek Qwah"'
Publikováno v:
APL Materials, Vol 10, Iss 8, Pp 081107-081107-7 (2022)
We report on the improvement of the surface morphology of c-plane GaN films grown at high growth rates (∼1 µm/h) using ammonia molecular beam epitaxy through a series of growth optimizations as well as the introduction of indium as a surfactant. T
Externí odkaz:
https://doaj.org/article/e4f2bb65309947edb05efd56e4a98fcb
Autor:
Jianfeng Wang, Kelsey Fast Jorgensen, Esmat Farzana, Kai Shek Qwah, Morteza Monavarian, Zachary J. Biegler, Thomas Mates, James S. Speck
Publikováno v:
APL Materials, Vol 9, Iss 8, Pp 081118-081118-7 (2021)
We report on ammonia and plasma-assisted molecular beam epitaxy (NH3-MBE and PAMBE) grown GaN layers with a low net carrier concentration (Nnet). Growth parameters, such as growth rate, V–III ratio, and plasma power, were investigated on different
Externí odkaz:
https://doaj.org/article/d3f98287f0934bcaaa6f5aa57b468d08
Improved Vertical Carrier Transport for Green III-Nitride LEDs Using (In,Ga)N Alloy Quantum Barriers
Autor:
Cheyenne Lynsky, Guillaume Lheureux, Bastien Bonef, Kai Shek Qwah, Ryan C. White, Steven P. DenBaars, Shuji Nakamura, Yuh-Renn Wu, Claude Weisbuch, James S. Speck
Publikováno v:
Physical Review Applied. 17
Autor:
Panpan Li, Hongjian Li, Yifan Yao, Kai Shek Qwah, Mike Iza, James S. Speck, Shuji Nakamura, Steven P. DenBaars
Publikováno v:
Optics Express. 31:7572
We demonstrate vertical integration of nitride-based blue/green micro-light-emitting diodes (µLEDs) stacks with independent junctions control using hybrid tunnel junction (TJ). The hybrid TJ was gown by metal organic chemical vapor deposition (p + G
Over 1 kV Vertical GaN-on-GaN p-n Diodes With Low On-Resistance Using Ammonia Molecular Beam Epitaxy
Autor:
Kelsey F. Jorgensen, James S. Speck, Morteza Monavarian, Esmat Farzana, Zachary J. Biegler, Kai Shek Qwah, Takeki Itoh, Jianfeng Wang
Publikováno v:
IEEE Electron Device Letters. 41:1806-1809
Vertical GaN-on-GaN p-n diodes grown by ammonia molecular beam epitaxy (NH3 MBE) are reported in this letter for prospective high-power application devices. The diodes, consisting of only $4~\mu \text{m}$ drift layer with low unintentional background
Publikováno v:
Physical Review Materials. 6
Publikováno v:
ECS Meeting Abstracts. :1363-1363
GaN has achieved widespread interest in high-power and high-speed electronics due to its wide-bandgap (WBG), large breakdown field, and high mobility compared to Si and SiC. There is also continued interest in the growth and development of GaN vertic
Autor:
Nishant Nookala, Micha N. Fireman, Mikhail A. Belkin, Kai Shek Qwah, Jiaming Xu, James S. Speck, Morteza Monavarian
Publikováno v:
Conference on Lasers and Electro-Optics.
We experimentally characterize mid-infrared intersubband transitions in identical Al0.5Ga0.5N/GaN heterostructures grown on a- and m-plane GaN substrates. The absorption peaks of the m-plane samples are 10 to 40% narrower than that of the a-plane sam
Autor:
Kelsey F. Jorgensen, James S. Speck, Esmat Farzana, Zachary J. Biegler, Kai Shek Qwah, Jianfeng Wang, Takeki Itoh, Morteza Monavarian
Publikováno v:
ECS Meeting Abstracts. :1004-1004
Autor:
Kelsey F. Jorgensen, Jianfeng Wang, James S. Speck, Thomas E. Mates, Kai Shek Qwah, Zachary J. Biegler, Esmat Farzana, Morteza Monavarian
Publikováno v:
APL Materials, Vol 9, Iss 8, Pp 081118-081118-7 (2021)
We report on ammonia and plasma-assisted molecular beam epitaxy (NH3-MBE and PAMBE) grown GaN layers with a low net carrier concentration (Nnet). Growth parameters, such as growth rate, V–III ratio, and plasma power, were investigated on different