Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Kai Saller"'
Autor:
Julian M. Dlugosch, Henning Seim, Achyut Bora, Takuya Kamiyama, Itai Lieberman, Falk May, Florian Müller-Plathe, Alexei Nefedov, Saurav Prasad, Sebastian Resch, Kai Saller, Christian Seim, Maximilian Speckbacher, Frank Voges, Marc Tornow, Peer Kirsch
Publikováno v:
ACS Applied Materials & Interfaces, 14 (27), 31044–31053
We present the prototype of a ferroelectric tunnel junction (FTJ), which is based on a self-assembled monolayer (SAM) of small, functional molecules. These molecules have a structure similar to those of liquid crystals, and they are embedded between
Autor:
Gregor Koblmüller, Paolo Lugli, H. Riedl, Kai Saller, Kung-Ching Liao, Marc Tornow, Jeffrey Schwartz
Publikováno v:
ACS applied materialsinterfaces. 12(25)
The architecture of electrically contacting the self-assembled monolayer (SAM) of an organophosphonate has a profound effect on a device where the SAM serves as an intermolecular conductive channel in the plane of the substrate. Nanotransfer printing
Autor:
Gerhard Abstreiter, K Ott, J. Treu, Xiaomo Xu, Gregor Koblmüller, Kai Saller, Jonathan J. Finley
Publikováno v:
Nanotechnology. 30:495703
InGaAs nanowire (NW) arrays have emerged as important active materials in future photovoltaic and photodetector applications, due to their excellent electronic properties and tunable band gap. Here, we report a systematic investigation of the optical
Publikováno v:
Journal of Vacuum Science & Technology B. 37:040602
Direct printing of nanogap-separated metallic contact pairs is described that enables novel nanoelectronic device architectures. Nanotransfer printing (nTP) stamps are grown by molecular beam epitaxy involving layered III-V semiconductors that are se
Autor:
Maximilian, Speckbacher, Julian, Treu, Thomas J, Whittles, Wojciech M, Linhart, Xiaomo, Xu, Kai, Saller, Vinod R, Dhanak, Gerhard, Abstreiter, Jonathan J, Finley, Tim D, Veal, Gregor, Koblmüller
Publikováno v:
Nano letters. 16(8)
Surface effects strongly dominate the intrinsic properties of semiconductor nanowires (NWs), an observation that is commonly attributed to the presence of surface states and their modification of the electronic band structure. Although the effects of
Autor:
Gerhard Boehm, Stefan Sprengel, Ralf Meyer, Markus-Christian Amann, Shamsul Arafin, A. Bachmann, Kristijonas Vizbaras, Kai Saller
Publikováno v:
Journal of Crystal Growth. 323:446-449
In this work, we present our approach towards the growth of active regions and cladding layers for GaSb based record low-threshold lasers emitting in the range of 2.5–2.7 μm. First, a study on Sb incorporation in the AlGaAsSb cladding layers and G
Autor:
Julian, Treu, Thomas, Stettner, Marc, Watzinger, Stefanie, Morkötter, Markus, Döblinger, Sonja, Matich, Kai, Saller, Max, Bichler, Gerhard, Abstreiter, Jonathan J, Finley, Julian, Stangl, Gregor, Koblmüller
Publikováno v:
Nano Letters
Core–shell nanowires (NW) have become very prominent systems for band engineered NW heterostructures that effectively suppress detrimental surface states and improve performance of related devices. This concept is particularly attractive for materi
Publikováno v:
Nano letters. 14(3)
The unique features of nanowires (NW), such as the high aspect ratio and extensive surface area, are expected to play a key role in the development of very efficient semiconductor surface emitters in the terahertz (THz) spectral range. Here, we repor
Autor:
Michael Bormann, Hannes Schmeiduch, J. Treu, Markus-Christian Amann, Sonja Matich, Gregor Koblmüller, Max Bichler, Kai Saller, Jonathan J. Finley, Benedikt Mayer, Markus Döblinger, Stefanie Morkötter, Peter R. Wiecha, Gerhard Abstreiter
Publikováno v:
Nano Letters
Nano Letters, American Chemical Society, 2013, 13 (12), pp.6070-6077. ⟨10.1021/nl403341x⟩
Nano Letters, American Chemical Society, 2013, 13 (12), pp.6070-6077. ⟨10.1021/nl403341x⟩
Utilizing narrow band gap nanowire (NW) materials to extend nanophotonic applications to the mid-infrared spectral region (>2-3 μm) is highly attractive, however, progress has been seriously hampered due to their poor radiative efficiencies arising
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::60d94fd5858d99995c70f7e4eef81d50
https://hal.archives-ouvertes.fr/hal-02484140
https://hal.archives-ouvertes.fr/hal-02484140
Autor:
J. Treu, Maximilian Speckbacher, Gerhard Abstreiter, H. Riedl, Kai Saller, Jonathan J. Finley, Stefanie Morkötter, Markus Döblinger, Xiaomo Xu, Gregor Koblmüller
Publikováno v:
Applied Physics Letters. 108:053110
We delineate the optimized growth parameter space for high-uniformity catalyst-free InGaAs nanowire (NW) arrays on Si over nearly the entire alloy compositional range using selective area molecular beam epitaxy. Under the required high group-V fluxes