Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Kai Hsuan Lee"'
Autor:
Chia Hao Chen, Kai Hsuan Lee, Sheng Po Chang, Hung-Wei Shiu, Shoou-Jinn Chang, Tse Pu Chen, Kuang Wei Liu, Ping Chuan Chang, Lo-Yueh Chang
Publikováno v:
Science of Advanced Materials. 5:873-880
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ca31c757655563c8235ddb255ba20d8
https://doi.org/10.1166/sam.2013.1533
https://doi.org/10.1166/sam.2013.1533
Publikováno v:
Journal of the Chinese Institute of Engineers. 37:152-164
Calcium-based sorbents synthesized from CaO, CaCO3, and Ca(OH)2 precursors were demonstrated as high-temperature CO2 capture materials. The effect on CO2 capture capability of calcium-based sorbents receiving different activations was also investigat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e793dc2517daa1daed667a1ad1514e18
https://doi.org/10.1080/02533839.2012.757045
https://doi.org/10.1080/02533839.2012.757045
Publikováno v:
Materials Chemistry and Physics. 134:899-904
InGaN materials grown by metalorganic chemical vapor deposition (MOCVD) using trimethylgallium (TMG) and triethylgallium (TEG) as alkyl source were compared. Ga-doped ZnO (GZO) films using radio frequency (RF) magnetron sputtering to feature Schottky
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f5c18847ba875c5002ef5d42bca128c
https://doi.org/10.1016/j.matchemphys.2012.03.087
https://doi.org/10.1016/j.matchemphys.2012.03.087
Publikováno v:
physica status solidi (a). 209:579-584
A GaN-based Schottky barrier diode (SBD) with a 5-pair AlGaN–GaN intermediate layer for ultraviolet (UV) photodetector (PD) was fabricated and investigated. It was found that we could achieve a smaller dark leakage current and noise level by using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b31889ce1ebaf39b90a2dd98e40ff4db
https://doi.org/10.1002/pssa.201127545
https://doi.org/10.1002/pssa.201127545
Autor:
Ping-Chuan Chang, Kai-Hsuan Lee
Publikováno v:
2013 IEEE 10th International Conference on Power Electronics and Drive Systems (PEDS).
In situ grown AlGaN/GaN heterostructure field-effect transistor (HFET) capped by unactivated Mg-doped GaN was demonstrated. With 1-μm-long gate length at drain-voltage of 10V, the presented HFET exhibited a drain-source current in saturation (IDSS)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6dfe0cf0bcd6b4de1045cd38768dda61
https://doi.org/10.1109/peds.2013.6527159
https://doi.org/10.1109/peds.2013.6527159
Publikováno v:
Applied Physics Letters. 103:081604
Graphene has been regarded as a prospective transparent electrode for a GaN-based light-emitting diode (LED), but fundamental knowledge about the intrinsic properties of the graphene/GaN contact is lacking. We have studied the optical and electronic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21ce67b5da408f50ec5d71c5a285e90d
https://doi.org/10.1063/1.4818787
https://doi.org/10.1063/1.4818787
Publikováno v:
Applied Physics Letters. 103:022101
A simple surface modification process to reduce the negative influences of oxygen vacancies/surface contamination and promote the performance of ZnO ultraviolet (UV) sensor is reported. ZnO film was self-assembled by 3-aminopropyltrimethoxysilane (AP
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::092e5cfaaaef54cfcf3fe383687dece2
https://doi.org/10.1063/1.4813107
https://doi.org/10.1063/1.4813107
Autor:
Sheng Po Chang, Hung-Wei Shiu, Shoou-Jinn Chang, Chia Hao Chen, Tse Pu Chen, Kai Hsuan Lee, Lo-Yueh Chang, Ping Chuan Chang
Publikováno v:
Applied Physics Letters. 102:072104
Al-doped ZnO (AZO) deposited by radio frequency co-sputtering is formed on epitaxial Mg-doped GaN template at room temperature to achieve n-AZO/p-GaN heterojunction. Alignment of AZO and GaN bands is investigated using synchrotron radiation based cro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa885b0ac8e2683834136603ecece356
https://doi.org/10.1063/1.4793434
https://doi.org/10.1063/1.4793434
Publikováno v:
Applied Physics Letters. 99:153505
In this study, we investigate AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistor with an in-situ AlN cap layer with regards to DC-, RF-, and power-performance. This “earlier” passivation by in-situ AlN cap layer prote
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ed904dc4ae6de593c69530c91458b88
https://doi.org/10.1063/1.3651495
https://doi.org/10.1063/1.3651495
Publikováno v:
Applied Physics Letters. 96:212105
We report an AlGaN/GaN high electron mobility transistors (HEMTs) based on InGaN/GaN multiquantum-well (MQW) structure. When InGaN/GaN MQW structure was inserted, InGaN layer has an opposite piezoelectric polarization field compared to AlGaN, which r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0d7bcedcdc579abf5c09cb65dc135bf
https://doi.org/10.1063/1.3421392
https://doi.org/10.1063/1.3421392