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Accurate metrology of extreme ultraviolet (EUV) photomask is a crucial task. In this paper, two different methods for reference EUV photomask metrology are compared. One is the critical dimension atomic force microscopy (CD-AFM). In the measurements,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e9cde3171787dfffbff984caa81810f3
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=85124108393
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=85124108393
Autor:
André Wählisch, Rainer Unterumsberger, Philipp Hönicke, Janin Lubeck, Yves Kayser, Jan Weser, Gaoliang Dai, Kai Hahm, Thomas Weimann, Christian Seim, Stefan Rehbein, Burkhard Beckhoff
Publikováno v:
Small. 19:2204943
A reliable and quantitative material analysis is crucial for assessing new technological processes, especially to facilitate a quantitative understanding of advanced material properties at the nanoscale. To this end, X‐ray fluorescence microscopy t
Publikováno v:
Nanomanufacturing and Metrology. 5:440-440
Publikováno v:
Measurement Science and Technology. 31:074011
A new method for accurately characterizing the tip geometry of critical dimension atomic force microscopy (CD-AFM) has been introduced. A sample type IVPS100-PTB whose line features have vertical sidewall, round corner with a radius of approx. 5 ∼
Autor:
Harald Bosse, Egbert Buhr, Bernd Bodermann, Ronald G. Dixson, Matthias Wurm, Wolfgang Häßler-Grohne, Detlef Bergmann, Gaoliang Dai, Kai Hahm
Publikováno v:
SPIE Proceedings.
We report the initial results of a recent bilateral comparison of linewidth or critical dimension (CD) calibrations on photomask line features between two national metrology institutes (NMIs): the National Institute of Standards and Technology (NIST)
Publikováno v:
Measurement Science and Technology. 28:065010
International comparisons between National Metrology Institutes are important to verify measurement results and the associated uncertainties. In this paper, we report a comparison of the line width calibration of a crystalline silicon line width stan
Publikováno v:
Nanoscale Calibration Standards and Methods: Dimensional and Related Measurements in the Micro-and Nanometer Range
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0152a3e9b7bea7c2118b901c3960fac
https://doi.org/10.1002/3527606661.ch29
https://doi.org/10.1002/3527606661.ch29
Publikováno v:
SPIE Proceedings.
We report on investigations and calibrations of chrome on quartz 5' test reticles with periodic line structures which are applied for qualification of optical performance of microlithographic lenses. The measurements are focused on the precise determ
Autor:
Jens Fluegge, Harald Bosse, Gaoliang Dai, Frank Scholze, Kai Hahm, Hermann Gross, Mark-Alexander Henn
Publikováno v:
Measurement Science and Technology. 25:044002
Accurate and traceable measurements of critical dimension (CD) and sidewall profile of extreme ultraviolet (EUV) photomask structures using atomic force microscopes (AFMs) are introduced in this paper. An instrument complementarily applied with two k
Publikováno v:
Measurement Science & Technology; May2017, Vol. 28 Issue 6, p1-1, 1p