Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Kai Grurmann"'
Publikováno v:
2016 IEEE Radiation Effects Data Workshop (REDW).
We report on results of TID/SEL/SEU/SEFI tests of a state of the art RH DDR2-SDRAM Memory solution. The hard errors (TID/SEL) verified at die level, and soft errors (SEU/SEFI) verified at system level.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf52f0deacd367abf2c89fc172e2d43c
https://doi.org/10.1109/nsrec.2016.7891748
https://doi.org/10.1109/nsrec.2016.7891748
Publikováno v:
2013 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
The influence of SEU and SEFI events in 4-Gbit DDR3 SDRAM on the data integrity of an example mass memory with a capacity of 4-Tbit and Single Symbol Error Correcting Reed-Solomon Code is investigated. Index Terms Bit Error Rate, DDR3 SDRAM, Error Co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::034466456e24c7f9da074d31f6d8029d
https://doi.org/10.1109/radecs.2013.6937439
https://doi.org/10.1109/radecs.2013.6937439
Publikováno v:
2013 IEEE Radiation Effects Data Workshop (REDW).
4-Gbit DDR3 SDRAM devices have been tested for total-dose effects up to 400 krad. Some devices show a very peculiar error pattern, depending on the time a page is kept active.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9dcde25758b9cce2acff63f4f8a00573
https://doi.org/10.1109/redw.2013.6658199
https://doi.org/10.1109/redw.2013.6658199
Publikováno v:
AHS
The Data Processing Unit (DPU) for the Polarimetric and Helioseismic Imager (PHI) instrument on the ESA Solar Orbiter mission will use Xilinx Virtex-4 XQR4VSX55 FPGAs for high data rate acquisition and processing tasks. This paper discusses the feasi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8300a88ac9213e62f5283cd9c44da65
https://doi.org/10.1109/ahs.2013.6604219
https://doi.org/10.1109/ahs.2013.6604219
Autor:
Kai Grurmann, Heikki Kettunen, Fritz Gliem, Veronique Ferlet-Cavrois, Hagen Schmidt, Gilbert Leibeling, Martin Herrmann
16/32-Gbit NAND-Flash and 4-Gbit DDR3 SDRAM memories have been tested under heavy ion irradiation. At high LET, 25nm NAND-Flash show MBUs at normal incidence. Techniques for SEFI mitigation in DDR3 SDRAM are studied.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b234a1407ebd42993b6fbd016f1f6c8e
http://juuli.fi/Record/0246569012
http://juuli.fi/Record/0246569012
Publikováno v:
2011 12th European Conference on Radiation and Its Effects on Components and Systems.
New generation 2 Gbit DDR3 SDRAMs from Micron, Samsung and Nanya have been tested under heavy ions. SEFIs significantly outweigh random SEU errors even at low LET; however, SEFIs can be mitigated by frequent re-initialization.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6072fe958eb80069d11c2814590ea55
https://doi.org/10.1109/radecs.2011.6131333
https://doi.org/10.1109/radecs.2011.6131333
Autor:
Veronique Ferlet-Cavrois, D. Walter, Martin Herrmann, Heikki Kettunen, Fritz Gliem, Kai Grurmann
Publikováno v:
2011 12th European Conference on Radiation and Its Effects on Components and Systems.
The angular dependence of the MBU-Cross-Section of two 8-Gbit-SLC-NAND-Flash and the orientation of the MBU-pattern has been measured.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1d961c9b95beb5bbb2f141f90c61c0e
https://doi.org/10.1109/radecs.2011.6131305
https://doi.org/10.1109/radecs.2011.6131305
Autor:
Veronique Ferlet-Cavrois, Fritz Gliem, Kai Grurmann, Martin Herrmann, Dietmar Walter, Heikki Kettunen
Publikováno v:
2011 IEEE Radiation Effects Data Workshop.
The angular dependence of the SEU and MBU cross sections of two 8-Gbit NAND-Flash memories, Samsung and Micron, is measured under Ar, Fe, and Kr irradiation. The omnidirectional sensitivity is calculated based on experimental results.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f0c1271dde55f49923b7fe874b7656a7
https://doi.org/10.1109/redw.2010.6062521
https://doi.org/10.1109/redw.2010.6062521