Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Kai Dr. Gäbel"'
Autor:
Vladimir M. Borisov, Uwe Stamm, Kai Dr. Gäbel, M. Darscht, O B Khristoforov, Guido Schriever, Aleksandr Yu. Vinokhodov
Publikováno v:
Microelectronic Engineering. :83-88
Recent results from the efforts of XTREME technologies in the development of high power EUV sources are presented in this paper. The third generation of a Z-pinch device is characterized in detail and demonstrates an EUV output power up to 7 W in-ban
Autor:
Willi Neff, Wolfgang Sandner, H. Stiehl, R. Sauerbrey, Kai Dr. Gäbel, Peter V. Nickles, L. Aschke, Ingo Will, Reinhart Poprawe, G. Schmahl, K. Bergmann, Heinrich Schwoerer, S. Düsterer, Dieter Hoffmann, Christian H. Ziener, Rainer Lebert, Peter Loosen, D. Rudolph, Oliver Rosier
Publikováno v:
Microelectronic Engineering. :87-92
While huge progress has been achieved for EUVL system design and multilayer optics during the last years the decision on the best suited source is still open. In a German basic research cooperation on short-wavelength plasma based sources some key is
Autor:
Adriaan Valster, Kai Dr. Gäbel, H. Heyer, Rainer Lebert, P. Loosen, P. Rußbüldt, Reinhart Poprawe
Publikováno v:
Optics Communications. 153:275-281
We demonstrate the first diode pumped, Kerr-lens mode locked fs-laser which is completely dispersion compensated by chirped mirrors. Low loss chirped mirrors together with advanced pump diodes permitted the generation of transform limited 65 fs pulse
Autor:
Kai Dr. Gäbel, Uwe Stamm
The availability of EUV light sources, measurement tools, and integrated test systems is of major importance for the development of EUVL to be used in high-volume chip manufacturing, which is expected to start in 2009. For economic use of EUVL, a thr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4041c9fc98e1ef5129cbbf6a370b87f
https://doi.org/10.1117/3.613774.ch19
https://doi.org/10.1117/3.613774.ch19
Autor:
D. Klopfel, Uwe Stamm, P. Kohler, S. Gotze, Guido Schriever, J. Ringling, Kai Dr. Gäbel, V. Korobotchko, F. Flohrer, Jürgen Dr. Kleinschmidt, I. Ahmad
Publikováno v:
Summaries of Papers Presented at the Lasers and Electro-Optics. CLEO '02. Technical Diges.
Summary form only given. Extending deep ultraviolet micro-lithography into the extreme ultraviolet (EUV) using wavelengths around 13.5 nm is the most promising approach to meet the demands of semiconductor chip manufacturing from the year 2007 on and
Autor:
Christian H. Ziener, Jesko Dr. Brudermann, Vladimir Korobotchko, Frank Flohrer, Jürgen Dr. Kleinschmidt, Sven Götze, Kai Dr. Gäbel, Uwe Stamm, Guido Hergenhan, Guido Schriever, D. Bolshukhin, Imtiaz Ahmad, Diethard Klöpfel, Istvan Balogh, Henry Birner, S. Enke, Chinh Duc Prof. Tran, Jens Ringling
Publikováno v:
SPIE Proceedings.
Semiconductor chip manufacturers are expecting to use extreme UV lithography for production in 2009. EUV tools require high power, brilliant light sources at 13.5 nm with collector optics producing 120 W average power at entrance of the illuminator s
Autor:
P. Russbuldt, Th. Udem, Theodor W. Hänsch, Ronald Holzwarth, P. St. J. Russell, William J. Wadsworth, Kai Dr. Gäbel, Jonathan Knight, Reinhart Poprawe, Marcus Zimmermann
Publikováno v:
ResearcherID
We have created a broad spectrum spanning more than an optical octave by launching femtosecond pulses from a battery operated Cr:LiSAF laser into a photonic crystal fiber. Despite the massive broadening in the fiber, the comb structure of the spectru
Autor:
Eckhart Forster, Oliver Treichel, Markus Vollbrecht, Kai Dr. Gäbel, Ingo Uschmann, Rainer Lebert
Publikováno v:
Applied Optics. 37:1803
Two-dimensional imaging in the wavelength region of the water window (N Ly alpha) is demonstrated with a toroidally curved thallium acid phthalate crystal. Direct imaging of a plasma pinch line, as well as imaging of a mesh with plasma backlighting i