Výsledky vyhledávání - "Kahatabi, R."

Report

Experimental and Theoretical Investigation of the Barrier Pyroelectric Effect in a Quantum Paraelectric Semiconductor

Autor: Butenko, A. V., Sandomirsky, V., Kahatabi, R., Dashevsky, Z., Kasiyan, V., Zalevsky, Z., Schlesinger, Y.

We describe here the first comprehensive investigation of a pyroelectric response of a p-n junction in a non-polar paraelectric semiconductor. The pyroelectric effect is generated by the, temperature dependent, built-in electrical dipole moment. High

Externí odkaz: http://arxiv.org/abs/0808.1475

Zobrazit plný text záznamu

Report

Pyroelectric Effect Induced by the Built-in Field in the p-n Junction of the Quantum Paraelectric PbTe: Experimental Study

Autor: Butenko, A. V., Sandomirsky, V., Kahatabi, R., Schlesinger, Y., Dashevsky, Z., Kasiyan, V.

We report here the first observation of a pyroelectric effect in a non-polar semiconductor. This effect originates in the temperature dependent electric dipole of the p-n junction. The junction was illuminated by a chopped CO2 laser beam, and periodi

Externí odkaz: http://arxiv.org/abs/0707.1773

Zobrazit plný text záznamu

Report

High-temperature PbTe diodes

Autor: Dashevsky, Z., Kasiyan, V., Mogilko, E., Butenko, A., Kahatabi, R., Genikov, S., Sandomirsky, V., Schlesinger, Y.

We describe the preparation of high-temperature PbTe diodes. Satisfactory rectification was observed up to 180-200 K. Two types of diodes, based on a p-PbTe single crystal, were prepared: (1) by In ion-implantation, and (2) by thermodiffusion of In.

Externí odkaz: http://arxiv.org/abs/0707.1213

Zobrazit plný text záznamu

Report

Characterization of high-temperature PbTe p-n junctions prepared by thermal diffusion and by ion-implantation

Autor: Butenko, A. V., Kahatabi, R., Mogilko, E., Strul, R., Sandomirsky, V., Schlesinger, Y., Dashevsky, Z., Kasiyan, V., Genikhov, S.

We describe here the characteristics of two types of high-quality PbTe p-n-junctions, prepared in this work: (1) by thermal diffusion of In4Te3 gas (TDJ), and (2) by ion implantation (implanted junction, IJ) of In (In-IJ) and Zn (Zn-IJ). The results,

Externí odkaz: http://arxiv.org/abs/0707.1207

Zobrazit plný text záznamu

Report

Electric Field Effect Analysis of Thin PbTe films on high-epsilon SrTiO3 Substrate

Autor: Butenko, A. V., Kahatabi, R., Sandomirsky, V., Schlesinger, Y., Sipatov, A. Yu., Volubuev, V. V.

Thin PbTe films (thickness 500 - 600 angstrom), deposited on SrTiO3, have been investigated by electric field effect (EFE). The high resistivity of such thin films warrants a high sensitivity of the EFE method. The SrTiO3 substrate serves as the diel

Externí odkaz: http://arxiv.org/abs/cond-mat/0610107

Zobrazit plný text záznamu