Zobrazeno 1 - 10
of 263
pro vyhledávání: '"Kah Wee Ang"'
Autor:
Yida Li, Alireza Alian, Maheswari Sivan, Li Huang, Kah Wee Ang, Dennis Lin, Dan Mocuta, Nadine Collaert, Aaron V.-Y. Thean
Publikováno v:
APL Materials, Vol 7, Iss 3, Pp 031503-031503-8 (2019)
An ultra-thin (15 nm) InGaAs nanomembrane field-effect phototransistor is transferred entirely from a rigid InP substrate onto a flexible SU-8 on a polydimethylsiloxane substrate. The transferred InGaAs device exhibits wide-band spectral response tun
Externí odkaz:
https://doaj.org/article/f77f7facc024464f890d9e1b54183d83
Autor:
Fernando Aguirre, Abu Sebastian, Manuel Le Gallo, Wenhao Song, Tong Wang, J. Joshua Yang, Wei Lu, Meng-Fan Chang, Daniele Ielmini, Yuchao Yang, Adnan Mehonic, Anthony Kenyon, Marco A. Villena, Juan B. Roldán, Yuting Wu, Hung-Hsi Hsu, Nagarajan Raghavan, Jordi Suñé, Enrique Miranda, Ahmed Eltawil, Gianluca Setti, Kamilya Smagulova, Khaled N. Salama, Olga Krestinskaya, Xiaobing Yan, Kah-Wee Ang, Samarth Jain, Sifan Li, Osamah Alharbi, Sebastian Pazos, Mario Lanza
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-40 (2024)
Abstract Artificial Intelligence (AI) is currently experiencing a bloom driven by deep learning (DL) techniques, which rely on networks of connected simple computing units operating in parallel. The low communication bandwidth between memory and proc
Externí odkaz:
https://doaj.org/article/2747dc5462eb47f38960b290c0cdbb9e
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 6, Pp n/a-n/a (2024)
Abstract Two‐dimensional Materials (2DMs) offer significant promise for advancing device miniaturization and extending Moore's law. Despite the challenges posed by high contact resistance in transistors, recent discoveries highlight semimetals as a
Externí odkaz:
https://doaj.org/article/41565d0b0e454e04be0e57fcdfddf42e
Publikováno v:
Nano-Micro Letters, Vol 16, Iss 1, Pp 1-30 (2024)
Highlights State-of-the-art research on two-dimensional material-based memristive arrays is comprehensively reviewed. Critical steps in achieving in-memory computing are identified and highlighted, covering material selection, device performance anal
Externí odkaz:
https://doaj.org/article/13b93b7e33cb4db2bed9d73fb09400b5
Autor:
Ngoc Thanh Duong, Yufei Shi, Sifan Li, Yu‐Chieh Chien, Heng Xiang, Haofei Zheng, Peiyang Li, Lingqi Li, Yangwu Wu, Kah‐Wee Ang
Publikováno v:
Advanced Science, Vol 11, Iss 12, Pp n/a-n/a (2024)
Abstract The development of all‐in‐one devices for artificial visual systems offers an attractive solution in terms of energy efficiency and real‐time processing speed. In recent years, the proliferation of smart sensors in the growth of Intern
Externí odkaz:
https://doaj.org/article/6867812883464f81852c61a598c9084f
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 1, Pp n/a-n/a (2024)
Abstract Time‐series analysis and forecasting play a vital role in the fields of economics and engineering. Neuromorphic computing, particularly recurrent neural networks (RNNs), has emerged as an effective approach to address these tasks. Reservoi
Externí odkaz:
https://doaj.org/article/49f7048f1f054b038c16aac86fdc4625
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-15 (2022)
Abstract Using DFT calculations, we investigate the effects of the type, location, and density of point defects in monolayer MoS2 on electronic structures and Schottky barrier heights (SBH) of Au/MoS2 heterojunction. Three types of point defects in m
Externí odkaz:
https://doaj.org/article/082bee83005643479b1b145e6bac1a70
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 6, Pp n/a-n/a (2023)
Abstract For Schottky barrier‐modulated memristors based on 2D semiconductors, it has, to date, not been possible to achieve control over defect type and concentration as the measured switching characteristics vary considerably even under similar f
Externí odkaz:
https://doaj.org/article/f068a76ee2774d53b9fc4d8c8a5b0a3c
Dynamic Ferroelectric Transistor‐Based Reservoir Computing for Spatiotemporal Information Processing
Publikováno v:
Advanced Intelligent Systems, Vol 5, Iss 6, Pp n/a-n/a (2023)
Reservoir computing (RC) architecture which mimics the human brain is a fundamentally preferred method to process dynamical systems that evolve with time. However, the difficulty in generating rich reservoir states using two‐terminal devices remain
Externí odkaz:
https://doaj.org/article/ca690be3c691498f8ac9f76fd23e937f
Publikováno v:
npj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-10 (2021)
Abstract State-of-the-art memristors are mostly formed by vertical metal–insulator–metal (MIM) structure, which rely on the formation of conductive filaments for resistive switching (RS). However, owing to the stochastic formation of filament, th
Externí odkaz:
https://doaj.org/article/cf214c11237f4ba4ab2322a3ed1c0b56