Zobrazeno 1 - 10
of 69
pro vyhledávání: '"Kageura, Taisuke"'
Autor:
Kageura, Taisuke, Sasama, Yosuke, Yamada, Keisuke, Kimura, Kosuke, Onoda, Shinobu, Takahide, Yamaguchi
Publikováno v:
Carbon 229, 119404 (2024)
The surface conductivity of hydrogen-terminated diamond is a topic of great interest from both scientific and technological perspectives. This is primarily due to the fact that the conductivity is exceptionally high without the need for substitutiona
Externí odkaz:
http://arxiv.org/abs/2310.17289
Autor:
Kageura, Taisuke, Sasama, Yosuke, Yamada, Keisuke, Kimura, Kosuke, Onoda, Shinobu, Takahide, Yamaguchi
Publikováno v:
In Carbon October 2024 229
Autor:
Sasama, Yosuke, Kageura, Taisuke, Imura, Masataka, Watanabe, Kenji, Taniguchi, Takashi, Uchihashi, Takashi, Takahide, Yamaguchi
Publikováno v:
Nature Electronics 5, 37 (2022)
Field-effect transistors made of wide-bandgap semiconductors can operate at high voltages, temperatures and frequencies with low energy losses, and have been of increasing importance in power and high-frequency electronics. However, the poor performa
Externí odkaz:
http://arxiv.org/abs/2102.05982
Autor:
Sasama, Yosuke, Kageura, Taisuke, Komatsu, Katsuyoshi, Moriyama, Satoshi, Inoue, Jun-ichi, Imura, Masataka, Watanabe, Kenji, Taniguchi, Takashi, Uchihashi, Takashi, Takahide, Yamaguchi
Publikováno v:
Journal of Applied Physics 127, 185707 (2020)
Diamond field-effect transistors (FETs) have potential applications in power electronics and high-output high-frequency amplifications. In such applications, high charge-carrier mobility is desirable for a reduced loss and high-speed operation. We ha
Externí odkaz:
http://arxiv.org/abs/2001.11831
Autor:
Kono, Shozo, Shima, Kohei, Chichibu, Shigefusa F., Shimomura, Masaru, Kageura, Taisuke, Kawarada, Hiroshi
Publikováno v:
In Diamond & Related Materials June 2023 136
Autor:
Creedon, Daniel, Jiang, Yi, Ganesan, Kumaravelu, Stacey, Alastair, Kageura, Taisuke, Kawarada, Hiroshi, McCallum, Jeffrey, Johnson, Brett, Prawer, Steven, Jamieson, David
Diamond, a wide band-gap semiconductor, can be engineered to exhibit superconductivity when doped heavily with boron. The phenomena has been demonstrated in samples grown by chemical vapour deposition where the boron concentration exceeds the critica
Externí odkaz:
http://arxiv.org/abs/1809.01800
Autor:
Takahide, Yamaguchi, Sasama, Yosuke, Takeya, Hiroyuki, Takano, Yoshihiko, Kageura, Taisuke, Kawarada, Hiroshi
Publikováno v:
Review of Scientific Instruments 89, 103903 (2018)
The ionic-liquid-gating technique can be applied to the search for novel physical phenomena at low temperatures because of its wide controllability of the charge carrier density. Ionic-liquid gated field-effect transistors are often fragile upon cool
Externí odkaz:
http://arxiv.org/abs/1806.09863
Akademický článek
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Autor:
Takahide, Yamaguchi, Sasama, Yosuke, Tanaka, Masashi, Takeya, Hiroyuki, Takano, Yoshihiko, Kageura, Taisuke, Kawarada, Hiroshi
We report magnetoresistance measurements of hydrogen-terminated (100)-oriented diamond surfaces where hole carriers are accumulated using an ionic-liquid-gated field-effect-transistor technique. Unexpectedly, the observed magnetoresistance is positiv
Externí odkaz:
http://arxiv.org/abs/1605.05035
Autor:
Kono, Shozo, Kageura, Taisuke, Hayashi, Yuya, Ri, Sung-Gi, Teraji, Tokuyuki, Takeuchi, Daisuke, Ogura, Masahiko, Kodama, Hideyuki, Sawabe, Atsuhito, Inaba, Masafumi, Hiraiwa, Atsushi, Kawarada, Hiroshi
Publikováno v:
In Diamond & Related Materials March 2019 93:105-130